Malgorzata Kac, Oleksandr Pastukh, Anna Nykiel, Łukasz Laskowski
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引用次数: 0
Abstract
Progress in artificial intelligence requires the development of new types of devices, such as artificial neural networks. Magnetic nanowires made of permalloy can be ideal materials for their production. The presented experimental and theoretical investigations of the FeNi nanowire matrix are the first stage of studies aimed at designing artificial neural networks. FeNi nanowires with a diameter of 40 nm were synthesized in alumina membranes by electrodeposition at potentials ranging from -1.0 V to -1.3 V vs. Ag/AgCl. Increasing voltage caused changes in the chemical composition of nanowires with a gradual increase in Ni content. Nanowires obtained at lower potentials showed an anomalous character of co-deposition. The elemental content influenced the phase composition. At higher potentials, Ni-rich alloys with fcc structure dominated (with Ni hcp phase), at a potential of -1.05 V vs. Ag/AgCl the FeNi phase was identified with a lattice parameter a = 0.355 nm, while at the lowest potential FeNi phase appeared. The samples demonstrated a preferred growth direction that varied with the chemical composition. All samples showed magnetic anisotropy with an easy axis along the nanowires. Low coercivity and squareness with high saturation magnetization were observed for the samples exhibiting permalloy composition. Micromagnetic simulations of nanowires with permalloy composition revealed the magnetization reversal mechanism, which proceeded through the nucleation and propagation of vortex domain walls. Analysis of the demagnetizing field distribution confirmed strong magnetostatic interactions between nanowires in the array and the important role of the vortex domain walls in reducing the demagnetization field value.
人工智能的进步需要开发新型设备,比如人工神经网络。由坡莫合金制成的磁性纳米线可能是制造它们的理想材料。本文对FeNi纳米线矩阵的实验和理论研究是设计人工神经网络研究的第一阶段。在-1.0 V ~ -1.3 V vs. Ag/AgCl电位下,在氧化铝膜上电沉积制备了直径为40 nm的FeNi纳米线。随着电压的升高,纳米线的化学成分发生了变化,镍含量逐渐增加。在低电位下得到的纳米线表现出反常的共沉积特征。元素含量影响相组成。在高电位下,富镍合金以fcc结构为主(以Ni hcp相为主),在-1.05 V vs. Ag/AgCl电位下鉴定出FeNi3相,晶格参数a = 0.355 nm,在最低电位下出现FeNi相。样品表现出随化学成分变化的优先生长方向。所有样品都表现出磁各向异性,沿纳米线呈易轴。具有坡莫合金成分的样品具有低矫顽力和高饱和磁化度。对含坡莫合金的纳米线进行微磁模拟,揭示了涡旋畴壁成核和扩展的磁化逆转机制。对消磁场分布的分析证实了阵列内纳米线之间的强静磁相互作用,以及涡流畴壁对降低消磁场值的重要作用。
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.