Metal-free high-contrast wafer-level step height standards with large height-range based on all-dielectric multilayers.

IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jinming Gou, Yuying Xie, Xiao Deng, Jingyuan Zhu, Siyu Dong, Chao Feng, Dongbai Xue, Lifeng Duan, Gang Sun, Lingling Ren, Xinbin Cheng, Tongbao Li
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引用次数: 0

Abstract

Wafer-level step height standards with high optical contrast are crucial in order to improve the accuracy of automatic image recognition in integrated circuits inspection instruments. While conventional Si-SiO2single-layer film step height standards typically employ metal coatings to address low contrast issues at low step heights, this approach can be problematic due to the introduction of metal particle contamination. In this paper, we propose a high-contrast wafer-level step height standard based on silicon-on-insulator (SOI) dielectric multilayers. The SOI multilayers, composed of Si-SiO2-Si layers are designed to achieve consistent high optical contrast across varying step heights by maximizing reflectance ratio. We designed three step height standards of 20 nm, 100 nm, 500 nm with different SOI multilayers. All were fabricated on 8 inch wafers by merging film deposition, electron-beam lithography and dry etching. The maximum contrast was two orders higher than single-layer film steps of the same height, while maintaining precision in step height measurement. This novel wafer-level step height standards have the potential to enhance image recognition efficiency while mitigating the risk of metal contamination to detection systems and production lines.

基于全介电多层的无金属高对比度晶圆级台阶高度标准,具有大高度范围。
为了提高集成电路检测仪器自动图像识别的精度,高光学对比度的晶片级步进高度标准是至关重要的。虽然传统的Si-SiO2单层膜台阶高度标准通常采用金属涂层来解决低台阶高度下的低对比度问题,但由于引入金属颗粒污染,这种方法可能会出现问题。在本文中,我们提出了一种基于绝缘体上硅(SOI)介电多层的高对比度晶圆级阶跃高度标准。SOI多层由Si-SiO2-Si层组成,通过最大化反射率,可以在不同阶跃高度上实现一致的高光学对比度。设计了20 nm、100 nm、500 nm的不同SOI多层阶梯高度标准。采用薄膜沉积、电子束光刻和干式蚀刻技术在8英寸晶圆上制备。在保持台阶高度测量精度的前提下,最大对比度比相同高度的单层膜台阶高两个数量级。这种新颖的晶圆级台阶高度标准具有提高图像识别效率的潜力,同时降低了金属污染检测系统和生产线的风险。 。
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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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