A novel microfluidic detection system based on digital lock-in amplifier with high bandwidth and low phase float

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-06-19 DOI:10.1016/j.sna.2025.116825

Hang Yang , Yuying Li , Yuanbo Yue , Xiaoxi He , Mu-Shui Zhang , Yan Liang , Yupan Wu , Zixin Wang

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Abstract

This paper presents a novel microfluidic detection system based on lock-in amplifier, improving the traditional signal processing scheme for RLC resonant structures. This paper introduces an innovative method for high-precision detection and analysis of weak current signal phase information. Besides, this paper successfully developed a self-designed digital lock-in amplifier with a bandwidth of 300 MHz and a sampling rate of 1 GHz. This system enables highly sensitive differentiation and precise detection of Polystyrene (Ps) microspheres and yeast cells in microfluidics. The speed of the particles is approximately 400–1000 µm/s. The measured phase signal for Ps microspheres had an average value of 0.0178219°and a high SNR of 32.98 dB, while for yeast cells, the average phase signal was −0.0115°and a high SNR of 29.17 dB. The measurement accuracy of this system shows an improvement of approximately 23 % compared to existing advanced equipment.

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一种基于高带宽、低相位浮子的数字锁相放大器的微流体检测系统

提出了一种基于锁相放大器的新型微流控检测系统，改进了传统的RLC谐振结构信号处理方案。本文介绍了一种对微弱电流信号相位信息进行高精度检测和分析的创新方法。此外，本文还成功研制了一个自行设计的带宽为300 MHz、采样率为1 GHz的数字锁相放大器。该系统能够在微流体中对聚苯乙烯（Ps）微球和酵母细胞进行高度敏感的分化和精确检测。粒子的速度约为400-1000 µm/s。Ps微球的相位信号平均值为0.0178219°，高信噪比为32.98 dB；酵母细胞的相位信号平均值为- 0.0115°，高信噪比为29.17 dB。该系统的测量精度比现有的先进设备提高了约23% %。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...