Hongjie Jiang , Kang Lai , Jose Fernando Waimin , Aimin Tu , Jiang Lai , Ali Shakouri , Muhammad A. Alam , Rahim Rahimi
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引用次数: 0
Abstract
The nitrate content is a crucial indicator for evaluating water quality and pollution levels, making monitoring essential. In this study, hundreds of nitrate ion-selective electrodes (-ISEs) were fabricated using a scalable manufacturing method for in-situ nitrate detection. This study investigated the impact of ion-selective membrane (ISM) geometry (e.g., thickness and surface area of the ISM) on the performance of ISEs. Potentiometric and electrochemical analyses demonstrated that ISEs with thinner ISMs or larger areas could complete their conditioning and achieve a stable potential within 12 h, compared to those with thicker ISMs or smaller areas. In particular, the increase in ISEs area enhanced long-term stability. The practical performance of the were assessed in a simulated soil environment, aquaculture water containing bacteria in an indoor laboratory setting, and subsequently in water runoff from agricultural fields over two weeks, showing high accuracies comparable to those obtained using much more expensive commercial glass sensors.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...