Role of surface oxygen-deficiency on optical and charge storage capacity of frustrated cerium doped zirconium oxides nanoparticles

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Palani Periyasamy , Santhosh Sacratees , Bakkiyaraj Ramanujam , Arulmani Subramanian , Rajasekaran Loganathan
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Abstract

The present work aims to induce three different oxygen vacancies in frustrated tetragonal zirconium oxide nanoparticles by cerium doping and identify its role on modifications in the structure, optical, and charge storage properties. XRD and Raman results revealed that all samples were crystallized into a frustrated tetragonal phase due to surface oxygen vacancies. XPS results confirmed the purity/composition of sample, presence of mixed 4+/3+ states of Zr and Ce. Optical band gap measurements showed an indirect band gap ranges from 3.38 to 3.23 eV. The sample CeZ2 showed better dielectric constant of 493 at 100 kHz and charge storage performance of 152.4 F/g at current density of 1.5 A/g with an electrochemical (EC) retention of about 93.75 % up to 1100 cycles can be a better choice of electrode for batteries/supercapacitors applications. Samples CeZ1 and CeZ3 with moderate EC performance due to poor electronic conductivity can be used in electro-ceramic applications.
表面氧缺乏对受挫铈掺杂氧化锆纳米粒子光学和电荷存储能力的影响
本研究旨在通过铈掺杂在受挫的四方氧化锆纳米颗粒中诱导出三种不同的氧空位,并确定其在结构、光学和电荷存储性能方面的作用。XRD和Raman结果表明,由于表面氧空位,所有样品都结晶成一个受挫的四方相。XPS结果证实了样品的纯度和组成,Zr和Ce存在4+/3+混合态。光学带隙测量表明,间接带隙范围为3.38 ~ 3.23 eV。CeZ2样品在100 kHz时介电常数为493,在电流密度为1.5 A/g时电荷存储性能为152.4 F/g,在1100次循环时电化学(EC)保留率约为93.75%,是电池/超级电容器应用的较好电极选择。样品CeZ1和CeZ3由于电子导电性差而具有中等的EC性能,可用于电陶瓷应用。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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