Enhanced superconductivity in carbon-doped aluminum thin films

IF 2.7 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Letters Pub Date : 2025-06-24 DOI:10.1016/j.matlet.2025.138982

Chanyoung Lee , Yeonkyu Lee , Jinyoung Yun , J.C. Zapata , S. Suárez , M. Sirena , Jeehoon Kim , N. Haberkorn

引用次数: 0

Abstract

We report on the superconducting properties of 40 nm thick C-doped aluminum (Al-C) thin films grown by co-sputtering on silicon substrates at room temperature. The films were fabricated by fixing the Al target power at 80 W and varying the C target power between 4 and 50 W. Carbon incorporation modifies the transport properties, decreasing the residual-resistivity ratio from ∼ 1.5 to ∼ 1.1 and moderately increasing the normal-state resistivity. For C powers above 12 W, T_c increases systematically, reaching 2.35 K without saturation. Measurements of the upper critical field reveal moderate values, with zero-temperature extrapolations of 0.09 T and 0.15 T for samples grown at 40 W and 50 W, respectively. Unlike the typical behavior observed with oxygen or nitrogen doping, the Al-C films exhibit a significant T_c enhancement without a substantial increase in normal-state resistivity.

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碳掺杂铝薄膜的超导性增强

本文报道了室温下在硅衬底上共溅射生长40 nm厚c掺杂铝（Al-C）薄膜的超导性能。将Al靶功率固定在80w， C靶功率在4 ~ 50w之间变化，制备了薄膜。碳的掺入改变了输运性质，将残余电阻率从~ 1.5降低到~ 1.1，并适度提高了正常状态电阻率。当C功率大于12 W时，Tc逐渐增大，达到2.35 K而不饱和。上临界场的测量结果显示了适中的值，在40瓦和50瓦生长的样品中，零温度外推值分别为0.09 T和0.15 T。与氧或氮掺杂的典型行为不同，Al-C薄膜表现出显著的Tc增强，而正常状态电阻率却没有显著增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Letters 工程技术-材料科学：综合

CiteScore

5.60

自引率

3.30%

发文量

1948

审稿时长

50 days

期刊介绍： Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials. Contributions include, but are not limited to, a variety of topics such as: • Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors • Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart • Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction • Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots. • Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing. • Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic • Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive