A comprehensive analysis of SNSFET, HS-NSFET and PHS-NSFET: Temperature and channel doping perspective

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-06-20 DOI:10.1016/j.micrna.2025.208252

M. Balasubrahmanyam, Ekta Goel

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Abstract

This study examines the impact of temperature and channel doping on the performance of three advanced gate-all-around field effect transistor designs i.e. Stacked nanosheet FET (SNSFET), H-shaped NSFET (HS NSFET), and the Pyramidal H-shaped NSFET (PHS NSFET) using sentaurus TACD tool. Various DC parameters such as drain-induced barrier lowering (DIBL), I_ON, I_ON/I_OFF ratio, subthreshold swing (SS), and threshold voltage (V_th), and AC/RF parameters such as transconductance (g_m), gate-gate capacitance (C_gg), cut-off frequency (f_T), gain bandwidth product (GBP), and transconductance frequency product (TFP) are evaluated at different temperatures of 250 K, 300 K, 350 K, and 400 K, for different channel doping concentrations of 10¹⁵ cm⁻³, 10¹⁶ cm⁻³, 10¹⁷ cm⁻³, and 10¹⁸ cm⁻³. The PHS NSFET shows, less variation in its DC/Analog parameters with respect to temperature, compared to SNSFET and HS NSFET proving PHS NSFET thermally stable for next generation semiconductor technologies. The PHS NSFET is found to have high noise margin compared to SNSFET and HS NSFET.

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snfet、HS-NSFET和PHS-NSFET的综合分析：温度和通道掺杂的观点

本研究利用senaurus TACD工具研究了温度和通道掺杂对三种先进的栅极-全方位场效应晶体管设计的影响，即堆叠纳米片场效应晶体管（snfet）、h形场效应晶体管（HS NSFET）和金字塔形h形场效应晶体管（PHS NSFET）。在250 K、300 K、350 K和400 K的不同温度下，对于1015 cm−3、1016 cm−3、1017 cm−3和1018 cm−3的不同通道掺杂浓度，评估了漏极诱导势垒降低（DIBL）、离子、离子/IOFF比、亚阈值摆幅（SS）和阈值电压（Vth）等各种直流参数，以及交流/RF参数，如跨导（gm）、栅极电容（Cgg）、截止频率（fT）、增益带宽积（GBP）和跨导频率积（TFP）。与snfet和HS NSFET相比，PHS NSFET的DC/模拟参数随温度的变化较小，证明了PHS NSFET在下一代半导体技术中的热稳定性。与snfet和HS NSFET相比，PHS NSFET具有较高的噪声裕度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

发文量