{"title":"Copper-triggered adjacent S sites activating for enhancing the hydrogen evolution reaction in acid media","authors":"Guidong Xu, Shuo Geng","doi":"10.1016/j.jelechem.2025.119276","DOIUrl":null,"url":null,"abstract":"<div><div>Activating the inert basal plane of MoS<sub>2</sub> is considered to be an efficient strategy to enhance the HER activity of MoS<sub>2</sub>. Herein, the adjacent S sites in the basal plane were activated by doping cu into MoS<sub>2</sub> nanosheets (cu-MoS<sub>2</sub>). The density functional theory (DFT) calculation and experimental results show that the electronic structure of S sites adjacent to cu was adjusted. Furthermore, the ∆GH* of adjacent S sites around cu in the basal plane is closer to zero, indicating that the adsorption of H on MoS<sub>2</sub> was also optimized. Benefiting from the activation of adjacent S sites around cu in the basal plane, the obtained cu-MoS<sub>2</sub> nanosheets exhibit a small overpotential of 172 mV to achieve 10 mA cm<sup>−2</sup> in acid media with a low Tafel slope of 49 mV decade<sup>−1</sup>. This strategy, which involves doping-triggered activation of adjacent inert active sites, can be expanded to other two-dimensional materials for boosting electrocatalytic activity</div></div>","PeriodicalId":355,"journal":{"name":"Journal of Electroanalytical Chemistry","volume":"994 ","pages":"Article 119276"},"PeriodicalIF":4.1000,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electroanalytical Chemistry","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1572665725003509","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, ANALYTICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Activating the inert basal plane of MoS2 is considered to be an efficient strategy to enhance the HER activity of MoS2. Herein, the adjacent S sites in the basal plane were activated by doping cu into MoS2 nanosheets (cu-MoS2). The density functional theory (DFT) calculation and experimental results show that the electronic structure of S sites adjacent to cu was adjusted. Furthermore, the ∆GH* of adjacent S sites around cu in the basal plane is closer to zero, indicating that the adsorption of H on MoS2 was also optimized. Benefiting from the activation of adjacent S sites around cu in the basal plane, the obtained cu-MoS2 nanosheets exhibit a small overpotential of 172 mV to achieve 10 mA cm−2 in acid media with a low Tafel slope of 49 mV decade−1. This strategy, which involves doping-triggered activation of adjacent inert active sites, can be expanded to other two-dimensional materials for boosting electrocatalytic activity
期刊介绍:
The Journal of Electroanalytical Chemistry is the foremost international journal devoted to the interdisciplinary subject of electrochemistry in all its aspects, theoretical as well as applied.
Electrochemistry is a wide ranging area that is in a state of continuous evolution. Rather than compiling a long list of topics covered by the Journal, the editors would like to draw particular attention to the key issues of novelty, topicality and quality. Papers should present new and interesting electrochemical science in a way that is accessible to the reader. The presentation and discussion should be at a level that is consistent with the international status of the Journal. Reports describing the application of well-established techniques to problems that are essentially technical will not be accepted. Similarly, papers that report observations but fail to provide adequate interpretation will be rejected by the Editors. Papers dealing with technical electrochemistry should be submitted to other specialist journals unless the authors can show that their work provides substantially new insights into electrochemical processes.