Baile Cui , Xu Gao , Zheng Zhao , Xufeng Xue , Qiming Yang , Jing Jin , Wen Wang , Yong Liang , Dongliang Guo
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引用次数: 0
Abstract
The contractless humidity sensing technology with far distance, high sensitivity and fast response is a favorable method to realize humidity measurement in complex environments. Herein, an ultra-thin 1 nm Graphene oxide (GO) film is deposited on the surface of a reflective delay linear SAW device to construct a SAW humidity sensor for wireless signal excitation and passive sensing. A radio frequency (RF) reader with low noise < ±0.003 dB has been successfully designed and manufactured for stable wireless sensing. The hydrogen bond between GO and water molecules, and the viscoelastic-acoustoelectric coupling effect improved the humidity sensitivity. Remarkably, the prepared SAW humidity sensor achieved high humidity sensitivity (0.46 dB/%RH), low detection limit (0.37 % RH), fast response and recovery speed (T90=15.5 s, T10=16.1 s) and excellent repeatability at 150 cm contractless distance. Practically, the contractless and passive SAW humidity sensor prepared in this study has the potential to realize high-precision and real-time humidity measurement in complex environments.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...