{"title":"Oriented p-type CuI thin film growth on n-SiC epitaxial layer for ultraviolet light detection","authors":"Xia Yang, Yanfei Lv, Junhua Xi, Li Fu, Fei Chen, Shichao Zhao","doi":"10.1016/j.matlet.2025.138967","DOIUrl":null,"url":null,"abstract":"<div><div>The absence of high-quality copper iodide (CuI) films significantly limits their application in transparent optoelectronics. This study investigated the growth of CuI films on silicon carbide (SiC) substrates and evaluates their performance in ultraviolet detection. Initially, copper (Cu) films were deposited on SiC substrates using magnetron sputtering, followed by iodization to form CuI films. The continuous and smooth CuI films grew along the (111) plane. The obtained heterojunction CuI/SiC exhibited a high On-Off ratio of 4.33 × 10<sup>6</sup>, a rapid response time (rise time 250 ms, fall time 172 ms), a high responsivity of 68 mA/W and a high detectivity of 1.56 × 10<sup>11</sup> Jones.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"398 ","pages":"Article 138967"},"PeriodicalIF":2.7000,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X25009966","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The absence of high-quality copper iodide (CuI) films significantly limits their application in transparent optoelectronics. This study investigated the growth of CuI films on silicon carbide (SiC) substrates and evaluates their performance in ultraviolet detection. Initially, copper (Cu) films were deposited on SiC substrates using magnetron sputtering, followed by iodization to form CuI films. The continuous and smooth CuI films grew along the (111) plane. The obtained heterojunction CuI/SiC exhibited a high On-Off ratio of 4.33 × 106, a rapid response time (rise time 250 ms, fall time 172 ms), a high responsivity of 68 mA/W and a high detectivity of 1.56 × 1011 Jones.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
• Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
• Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
• Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
• Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive