Oriented p-type CuI thin film growth on n-SiC epitaxial layer for ultraviolet light detection

IF 2.7 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Xia Yang, Yanfei Lv, Junhua Xi, Li Fu, Fei Chen, Shichao Zhao
{"title":"Oriented p-type CuI thin film growth on n-SiC epitaxial layer for ultraviolet light detection","authors":"Xia Yang,&nbsp;Yanfei Lv,&nbsp;Junhua Xi,&nbsp;Li Fu,&nbsp;Fei Chen,&nbsp;Shichao Zhao","doi":"10.1016/j.matlet.2025.138967","DOIUrl":null,"url":null,"abstract":"<div><div>The absence of high-quality copper iodide (CuI) films significantly limits their application in transparent optoelectronics. This study investigated the growth of CuI films on silicon carbide (SiC) substrates and evaluates their performance in ultraviolet detection. Initially, copper (Cu) films were deposited on SiC substrates using magnetron sputtering, followed by iodization to form CuI films. The continuous and smooth CuI films grew along the (111) plane. The obtained heterojunction CuI/SiC exhibited a high On-Off ratio of 4.33 × 10<sup>6</sup>, a rapid response time (rise time 250 ms, fall time 172 ms), a high responsivity of 68 mA/W and a high detectivity of 1.56 × 10<sup>11</sup> Jones.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"398 ","pages":"Article 138967"},"PeriodicalIF":2.7000,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X25009966","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The absence of high-quality copper iodide (CuI) films significantly limits their application in transparent optoelectronics. This study investigated the growth of CuI films on silicon carbide (SiC) substrates and evaluates their performance in ultraviolet detection. Initially, copper (Cu) films were deposited on SiC substrates using magnetron sputtering, followed by iodization to form CuI films. The continuous and smooth CuI films grew along the (111) plane. The obtained heterojunction CuI/SiC exhibited a high On-Off ratio of 4.33 × 106, a rapid response time (rise time 250 ms, fall time 172 ms), a high responsivity of 68 mA/W and a high detectivity of 1.56 × 1011 Jones.
紫外光检测用n-SiC外延层定向p型CuI薄膜的生长
高质量的碘化铜(CuI)薄膜的缺乏严重限制了其在透明光电子学中的应用。本文研究了在碳化硅(SiC)衬底上生长CuI薄膜,并对其紫外检测性能进行了评价。首先,采用磁控溅射在SiC衬底上沉积铜(Cu)薄膜,然后进行碘化以形成CuI薄膜。连续光滑的CuI薄膜沿(111)平面生长。得到的异质结CuI/SiC具有4.33 × 106的高通断比、快速的响应时间(上升时间250 ms,下降时间172 ms)、68 mA/W的高响应率和1.56 × 1011 Jones的高探测率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Letters
Materials Letters 工程技术-材料科学:综合
CiteScore
5.60
自引率
3.30%
发文量
1948
审稿时长
50 days
期刊介绍: Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials. Contributions include, but are not limited to, a variety of topics such as: • Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors • Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart • Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction • Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots. • Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing. • Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic • Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信