Yanqiu Li;Zhiqiang Wang;Kuan Wang;Jun Yuan;Guoqing Xin;Xiaojie Shi
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引用次数: 0
Abstract
This article introduces a modeling method for the reverse biased electric field of junction barrier Schottky (JBS) diodes, utilizing the Schwarz-Christoffel transformation. Building upon prior research on JBS diodes electric field modeling, this approach is rooted in a purely theoretical derivation, avoiding the dependence on conclusions from simulation software—a limitation of earlier modeling methods. In this study, complex boundary conditions are transformed mathematically into simpler ones to make it possible to solve for the electric field. Then, the analytic solution of the electric field distribution is obtained by using the superposition theorem. To validate this modeling method, the electric field distribution from this model is compared with results from simulation software, and a way of applying the analytic solution of the electric field distribution in commercial simulation software is given.
期刊介绍:
The purpose of this Transactions is to publish papers of interest to individuals in the area of computer-aided design of integrated circuits and systems composed of analog, digital, mixed-signal, optical, or microwave components. The aids include methods, models, algorithms, and man-machine interfaces for system-level, physical and logical design including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, hardware-software co-design and documentation of integrated circuit and system designs of all complexities. Design tools and techniques for evaluating and designing integrated circuits and systems for metrics such as performance, power, reliability, testability, and security are a focus.