The in-plane anisotropy of topological semimetal Nb3SiTe6 investigated by angle-resolved polarized Raman spectroscopy

IF 3.5 2区 物理与天体物理 Q2 PHYSICS, APPLIED
Qinghang Liu, Xiaolan Zhang, Peng Zhu, Wenjian Lai, Yuxiang Chen, Xiang Li, Zhiwei Wang, Qinsheng Wang
{"title":"The in-plane anisotropy of topological semimetal Nb3SiTe6 investigated by angle-resolved polarized Raman spectroscopy","authors":"Qinghang Liu, Xiaolan Zhang, Peng Zhu, Wenjian Lai, Yuxiang Chen, Xiang Li, Zhiwei Wang, Qinsheng Wang","doi":"10.1063/5.0269647","DOIUrl":null,"url":null,"abstract":"The in-plane anisotropy of the layered topological semimetal Nb3SiTe6, owing to its unique lattice structure and nontrivial electronic states, may play an important role in low-power, multifunctional optoelectronic devices by regulating anisotropy, and provide an ideal research platform for exploring quantum phenomena such as chiral anomaly and quantum Hall effect. In the above-mentioned research related to material anisotropy, it is necessary to determine the crystallographic orientation of thin-layer samples. In this paper, we systematically studied the optical in-plane anisotropy of the layered topological semimetal Nb3SiTe6 via angle-resolved polarized Raman spectroscopy. The Raman intensities of the 13 Raman peaks show clear polarization dependence. Based on the lattice symmetry of multilayer Nb3SiTe6, we accurately distinguished the two Raman modes of Nb3SiTe6 and corresponding Raman peaks. In addition, we proposed a method for quickly, accurately, and nondestructively determining the crystallographic orientation of multilayer Nb3SiTe6 by polarized Raman spectroscopy. This work provides a crucial foundation for exploring potential applications of the anisotropy of Nb3SiTe6 in thermoelectric and optoelectronic fields.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0269647","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

The in-plane anisotropy of the layered topological semimetal Nb3SiTe6, owing to its unique lattice structure and nontrivial electronic states, may play an important role in low-power, multifunctional optoelectronic devices by regulating anisotropy, and provide an ideal research platform for exploring quantum phenomena such as chiral anomaly and quantum Hall effect. In the above-mentioned research related to material anisotropy, it is necessary to determine the crystallographic orientation of thin-layer samples. In this paper, we systematically studied the optical in-plane anisotropy of the layered topological semimetal Nb3SiTe6 via angle-resolved polarized Raman spectroscopy. The Raman intensities of the 13 Raman peaks show clear polarization dependence. Based on the lattice symmetry of multilayer Nb3SiTe6, we accurately distinguished the two Raman modes of Nb3SiTe6 and corresponding Raman peaks. In addition, we proposed a method for quickly, accurately, and nondestructively determining the crystallographic orientation of multilayer Nb3SiTe6 by polarized Raman spectroscopy. This work provides a crucial foundation for exploring potential applications of the anisotropy of Nb3SiTe6 in thermoelectric and optoelectronic fields.
用角分辨偏振拉曼光谱研究了拓扑半金属Nb3SiTe6的面内各向异性
层状拓扑半金属Nb3SiTe6的面内各向异性,由于其独特的晶格结构和非平凡的电子态,可以通过调节各向异性在低功耗、多功能光电器件中发挥重要作用,并为探索手性异常和量子霍尔效应等量子现象提供了理想的研究平台。在上述与材料各向异性相关的研究中,有必要确定薄层样品的晶体取向。本文利用角分辨偏振拉曼光谱系统地研究了层状拓扑半金属Nb3SiTe6的光学面内各向异性。13个拉曼峰的拉曼强度表现出明显的极化依赖性。基于多层Nb3SiTe6的晶格对称性,我们准确区分了Nb3SiTe6的两种拉曼模式和相应的拉曼峰。此外,我们还提出了一种利用偏振拉曼光谱快速、准确、无损地测定多层Nb3SiTe6晶体取向的方法。这项工作为探索Nb3SiTe6的各向异性在热电和光电子领域的潜在应用提供了重要的基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
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