Conductive dendrite engineering of single-crystalline two-dimensional dielectric memristors.

Abstract

Ultralow-power non-volatile memristors are key elements in electronics. Generally, power reduction of memristors compromises data retention, a challenge known as the "power-retention dilemma," due to the stochastic formation of conductive dendrites in resistive-switching materials. Here, we report the results of conductive dendrite engineering in single-crystalline two-dimensional (2D) dielectrics in which directional control of filamentary distribution is possible. We find that the single-vacancy density (n_SV) of single-crystalline hexagonal boron nitride (h-BN) plays an essential role in regulating conductive dendrite growth, supported by scanning joule expansion microscopy (SJEM). With optimized n_SV, random dendrite growth is largely limited, and electrons hop between the neighboring Ag nanoclusters in vertical channels. The corresponding model was established to probe the relationship between n_SV and memristor operating voltage. The conductive channel confinement in the vertical orientation contributes to long-retention non-volatile memristors with ultralow switch voltages (set: 26 mV; reset: -135 mV), excellent power efficiency (4 fW standby and a switching energy of 72 pJ) while keeping a high on/off resistance ratio of 10⁸. Even at a record-low compliance current of 10 nA, memristors retains very robust non-volatile, multiple resistive states with an operating voltage less than 120 mV (the per-transition power low as 900 pW).