Single Event Effect Characterization of 128-Layer 3-D TLC NAND Flash Memory With Xtacking Technology

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2025-03-09 DOI:10.1109/TNS.2025.3568405

Qiang Yan;Junshe An;Chang Liu

{"title":"Single Event Effect Characterization of 128-Layer 3-D TLC NAND Flash Memory With Xtacking Technology","authors":"Qiang Yan;Junshe An;Chang Liu","doi":"10.1109/TNS.2025.3568405","DOIUrl":null,"url":null,"abstract":"The single event effect (SEE) response under heavy-ion irradiation for 128-layer 3-D triple-level cell (TLC) <sc>nand</small> flash memory from Yangtze Memory Technologies Company Ltd. (YMTC) with Xtacking technology is presented in this study. Current variation, bit error map, data pattern, and layer dependence are discussed. The results reveal significant variations in current behavior across different linear energy transfer (LET) levels, with single event functional interruptions (SEFIs) requiring a power cycle for recovery. Configured both in single-level cell (SLC) and TLC modes, we investigate that TLC mode demonstrates a higher density of errors and greater sensitivity in data patterns compared to the SLC mode. In addition, the layer-specific error analysis highlights that the upper layers and boundary layers exhibit higher error rates compared to other layers primarily due to direct exposure to heavy ions in the upper layers and the narrower channel widths in boundary layers. These findings enhance our understanding of 3-D <sc>nand</small> flash reliability in aerospace applications and inform the design of robust storage systems for space environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1889-1896"},"PeriodicalIF":1.9000,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10994841/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The single event effect (SEE) response under heavy-ion irradiation for 128-layer 3-D triple-level cell (TLC) nand flash memory from Yangtze Memory Technologies Company Ltd. (YMTC) with Xtacking technology is presented in this study. Current variation, bit error map, data pattern, and layer dependence are discussed. The results reveal significant variations in current behavior across different linear energy transfer (LET) levels, with single event functional interruptions (SEFIs) requiring a power cycle for recovery. Configured both in single-level cell (SLC) and TLC modes, we investigate that TLC mode demonstrates a higher density of errors and greater sensitivity in data patterns compared to the SLC mode. In addition, the layer-specific error analysis highlights that the upper layers and boundary layers exhibit higher error rates compared to other layers primarily due to direct exposure to heavy ions in the upper layers and the narrower channel widths in boundary layers. These findings enhance our understanding of 3-D nand flash reliability in aerospace applications and inform the design of robust storage systems for space environments.

查看原文本刊更多论文

基于Xtacking技术的128层3-D TLC NAND闪存单事件效应表征

采用Xtacking技术，研究了长江记忆技术有限公司生产的128层3-D三层TLC闪存在重离子辐照下的单事件效应（SEE）响应。讨论了电流变化、误码映射、数据模式和层依赖关系。结果显示，电流行为在不同的线性能量传递（LET）水平上存在显著差异，单事件功能中断（sefi）需要一个电源周期才能恢复。在单级单元（SLC）和TLC模式下配置，我们研究了TLC模式与SLC模式相比，在数据模式中表现出更高的错误密度和更高的灵敏度。此外，层特异性误差分析强调，与其他层相比，上层和边界层表现出更高的错误率，主要是由于上层直接暴露于重离子和边界层中较窄的通道宽度。这些发现增强了我们对航空航天应用中3d闪存可靠性的理解，并为空间环境中健壮的存储系统的设计提供了信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.