{"title":"Dynamic Voltage-Dependent Modeling of Single Event Transients in CMOS Ring Oscillators","authors":"Venkata Sathyajith Kampati;Stefano Bonaldo;Paul Leroux;Jeffrey Prinzie","doi":"10.1109/TNS.2025.3564513","DOIUrl":null,"url":null,"abstract":"This article introduces a novel dynamic voltage-dependent (DVD) model for simulating single-event transients (SETs) in complementary metal-oxide-semiconductor (CMOS) circuits. This model overcomes the limitations of voltage-independent and static voltage-dependent SET models, offering improved accuracy and scalability for a linear energy transfer (LET) of up to 100 MeV<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>cm2/mg. The model, integrated into the Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, precisely captures the relationship between SET-induced current pulses and node voltage, allowing to enhance the performance of large signal RF circuits for radiation-sensitive applications. Validations through technology computer aided design (TCAD) simulations show a close agreement, providing valuable insights into SET effects on oscillators. This advancement in SET modeling is a critical tool for designing high-speed radiation-hardened circuits.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1897-1906"},"PeriodicalIF":1.9000,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10977022/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article introduces a novel dynamic voltage-dependent (DVD) model for simulating single-event transients (SETs) in complementary metal-oxide-semiconductor (CMOS) circuits. This model overcomes the limitations of voltage-independent and static voltage-dependent SET models, offering improved accuracy and scalability for a linear energy transfer (LET) of up to 100 MeV$\cdot $ cm2/mg. The model, integrated into the Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, precisely captures the relationship between SET-induced current pulses and node voltage, allowing to enhance the performance of large signal RF circuits for radiation-sensitive applications. Validations through technology computer aided design (TCAD) simulations show a close agreement, providing valuable insights into SET effects on oscillators. This advancement in SET modeling is a critical tool for designing high-speed radiation-hardened circuits.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.