The effect of air annealing on the optical and luminescence properties of Bi-doped β-Ga2O3 single crystals

IF 3.3 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence Pub Date : 2025-06-16 DOI:10.1016/j.jlumin.2025.121367

Xiaolong Yang, Peng Sun, Lin Huang, Chaoyi Zhang, Wudi Wang, Xiaotong Peng, Chenbo Zhang, Jun Xu, Huili Tang, Bo Liu

{"title":"The effect of air annealing on the optical and luminescence properties of Bi-doped β-Ga2O3 single crystals","authors":"Xiaolong Yang, Peng Sun, Lin Huang, Chaoyi Zhang, Wudi Wang, Xiaotong Peng, Chenbo Zhang, Jun Xu, Huili Tang, Bo Liu","doi":"10.1016/j.jlumin.2025.121367","DOIUrl":null,"url":null,"abstract":"<div><div>β-Ga2O3, as a highly promising fourth-generation ultra-wide bandgap semiconductor material, can be grown as Bi-doped single crystals using the optical floating zone method. This work investigated the effects of air annealing on the optical and luminescence properties of Bi-doped β-Ga2O3 single crystals. Comparing the as-grown and air-annealed samples revealed that annealing reduced the concentration of VO in Bi-doped β-Ga2O3 single crystal through environmental oxygen compensation. After annealing, transmission spectra indicated a significant decrease in carrier concentration, while the PL spectra exhibited enhanced intensity and prolonged decay time, with an increased proportion of GL emission, attributed to the increase in VGa. This phenomenon is due to the effective suppression of Auger recombination by the reduced carrier concentration, thereby enhancing the radiative recombination-dominated luminescence process. These findings not only elucidate the effect of annealing on the optical properties of Bi-doped β-Ga2O3 single crystals but also further expand our understanding of their recombination transitions.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"286 ","pages":"Article 121367"},"PeriodicalIF":3.3000,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Luminescence","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022231325003072","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}

引用次数: 0

Abstract

β-Ga₂O₃, as a highly promising fourth-generation ultra-wide bandgap semiconductor material, can be grown as Bi-doped single crystals using the optical floating zone method. This work investigated the effects of air annealing on the optical and luminescence properties of Bi-doped β-Ga₂O₃ single crystals. Comparing the as-grown and air-annealed samples revealed that annealing reduced the concentration of V_O in Bi-doped β-Ga₂O₃ single crystal through environmental oxygen compensation. After annealing, transmission spectra indicated a significant decrease in carrier concentration, while the PL spectra exhibited enhanced intensity and prolonged decay time, with an increased proportion of GL emission, attributed to the increase in V_Ga. This phenomenon is due to the effective suppression of Auger recombination by the reduced carrier concentration, thereby enhancing the radiative recombination-dominated luminescence process. These findings not only elucidate the effect of annealing on the optical properties of Bi-doped β-Ga₂O₃ single crystals but also further expand our understanding of their recombination transitions.

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空气退火对双掺杂β-Ga2O3单晶光学和发光性能的影响

β-Ga2O3是一种极具发展前景的第四代超宽带半导体材料，利用光学浮区法可以生长成双掺杂单晶。本文研究了空气退火对双掺杂β-Ga2O3单晶光学和发光性能的影响。对比生长和空气退火样品发现，退火通过环境氧补偿降低了双掺杂β-Ga2O3单晶中VO的浓度。退火后，透射光谱显示载流子浓度显著降低，而PL光谱表现出强度增强和衰减时间延长，由于VGa的增加，GL发射比例增加。这种现象是由于降低载流子浓度有效地抑制了俄歇重组，从而增强了辐射重组主导的发光过程。这些发现不仅阐明了退火对双掺杂β-Ga2O3单晶光学性质的影响，而且进一步扩展了我们对其复合转变的认识。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Luminescence 物理-光学

CiteScore

6.70

自引率

13.90%

发文量

850

审稿时长

3.8 months

期刊介绍： The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid. We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.