Wideband photoelectric detector based on SnSb2Te4 single crystal at room temperature

Abstract

Terahertz (THz) wave, as the transition region between microwave and infrared light in the electromagnetic spectrum, shows unique technical advantages in the fields such as high-speed communication, biomedical imaging, astronomical spectral analysis, and non-destructive security inspection. However, THz detection faces key technological bottlenecks due to the factors of unmatched material bandgap, serious dark current, and low absorption. In this study, high quality of SnSb₂Te₄ single crystal was prepared by chemical vapor transport (CVT) and wide-spectrum photo detectors were fabricated from visible light to THz wave at room temperature with high responsivities of 16,162, 8077, and 3434 A W^-1 at characteristic frequencies of 0.0249 THz, 0.346 THz, and 0.509 THz, respectively, as well as ultra-low noise equivalent power of 7.33 fW Hz^-1/2 and fast response time of 12 μs. Our results demonstrate that SnSb₂Te₄-based photoelectric detectors have significant application prospects in the next generation of wide-spectrum optoelectronic devices.