Nanoscopic structural and emission properties of red InGaN hybrid single quantum wells

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-06-17 DOI:10.1063/5.0255145

Zhaozong Zhang, Ryota Ishii, Kanako Shojiki, Mitsuru Funato, Daisuke Iida, Kazuhiro Ohkawa, Yoichi Kawakami

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引用次数: 0

Abstract

Using atomic force microscopy (AFM) and scanning near-field optical microscopy (SNOM)-photoluminescence (PL) spectroscopy (SNOM-PL), we study the nanoscopic structural and emission properties of a red InGaN hybrid single quantum well (SQW), consisting of a blue and a red InGaN SQW. AFM images reveal the presence of threading-dislocation (TD)-related V-pits and shallow trench defects. The trench defects are classified into three categories on the basis of their height relative to a flat QW: lowered-, level-, and raised-center trench defects. SNOM-PL images demonstrate that TDs and all types of shallow trench defects exhibit a low emission intensity, indicating that they act as non-radiative recombination centers. Unlike previous studies on low-In content samples, all the trench defects exhibit a low emission intensity in our high-In content sample because of In segregation. Given the correlation of dark emission positions between the blue and red emissions, as well as the lower screw-type TD density at the surface than at the n-GaN layer, screw-type TDs should be one of the triggers in the formation of shallow trench defects. Therefore, to enhance the external quantum efficiency of hybrid InGaN red LEDs, it is crucial to suppress In segregation within shallow trench defects and decrease screw-type TD density.

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红色InGaN杂化单量子阱的纳米结构和发射特性

利用原子力显微镜（AFM）和扫描近场光学显微镜(SNOM)-光致发光（PL）光谱（SNOM-PL）技术，研究了由蓝色和红色InGaN SQW组成的红色InGaN混合单量子阱（SQW）的纳米结构和发射特性。AFM图像显示存在与螺纹位错（TD）相关的v形坑和浅沟槽缺陷。沟槽缺陷根据其相对于平面QW的高度分为三类：低中心、水平中心和高中心沟槽缺陷。SNOM-PL图像显示，td和所有类型的浅沟槽缺陷都表现出较低的发射强度，表明它们是非辐射复合中心。与以往对低铟含量样品的研究不同，在我们的高铟含量样品中，由于铟偏析，所有的沟槽缺陷都表现出较低的发射强度。考虑到蓝色和红色发射的暗发射位置之间的相关性，以及表面的螺旋型TD密度低于n-GaN层，螺旋型TD应该是浅沟槽缺陷形成的触发因素之一。因此，为了提高混合InGaN红色led的外量子效率，抑制浅沟槽缺陷内的In偏析和降低螺旋型TD密度至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.