{"title":"Energy bandgap of ZnSe bulk crystal between 300 K and 1000 K","authors":"Ching-Hua Su","doi":"10.1016/j.matlet.2025.138955","DOIUrl":null,"url":null,"abstract":"<div><div>The direct energy bandgap between conduction and valance bands at Γ point for zinc-blende structure ZnSe crystal has been determined by optical transmission measurements. The starting material of ZnSe powder was loaded inside an optical cell with windows. After the heat treatments to de-oxidized impurities and adjust the stoichiometry, a bulk crystal of ZnSe was grown in the window area by physical vapor transport. The optical transmission through the ZnSe crystal was measured from 297 K to 992 K and the energy bandgaps were derived from the corresponding optical absorption spectra. The measured values of the bandgaps were fit as a function of temperature using the Varshni expression with two of the three parameters, i.e., the Debye temperature and energy bandgap at temperature of 4 K, fixed from the literature data.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"398 ","pages":"Article 138955"},"PeriodicalIF":2.7000,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X2500984X","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The direct energy bandgap between conduction and valance bands at Γ point for zinc-blende structure ZnSe crystal has been determined by optical transmission measurements. The starting material of ZnSe powder was loaded inside an optical cell with windows. After the heat treatments to de-oxidized impurities and adjust the stoichiometry, a bulk crystal of ZnSe was grown in the window area by physical vapor transport. The optical transmission through the ZnSe crystal was measured from 297 K to 992 K and the energy bandgaps were derived from the corresponding optical absorption spectra. The measured values of the bandgaps were fit as a function of temperature using the Varshni expression with two of the three parameters, i.e., the Debye temperature and energy bandgap at temperature of 4 K, fixed from the literature data.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
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• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive