Energy bandgap of ZnSe bulk crystal between 300 K and 1000 K

IF 2.7 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Ching-Hua Su
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引用次数: 0

Abstract

The direct energy bandgap between conduction and valance bands at Γ point for zinc-blende structure ZnSe crystal has been determined by optical transmission measurements. The starting material of ZnSe powder was loaded inside an optical cell with windows. After the heat treatments to de-oxidized impurities and adjust the stoichiometry, a bulk crystal of ZnSe was grown in the window area by physical vapor transport. The optical transmission through the ZnSe crystal was measured from 297 K to 992 K and the energy bandgaps were derived from the corresponding optical absorption spectra. The measured values of the bandgaps were fit as a function of temperature using the Varshni expression with two of the three parameters, i.e., the Debye temperature and energy bandgap at temperature of 4 K, fixed from the literature data.
ZnSe块状晶体在300 ~ 1000 K之间的能带隙
通过光学透射测量,确定了锌-闪锌矿结构ZnSe晶体Γ处导价带间的直接能隙。将ZnSe粉末作为起始材料,装入带窗口的光学电池中。经过热处理脱氧杂质和调整化学计量后,通过物理蒸汽输送在窗口区生长出大块的ZnSe晶体。在297 ~ 992 K范围内测量了ZnSe晶体的光透射率,并根据相应的光吸收光谱得到了能带。带隙的测量值作为温度的函数,使用Varshni表达式与三个参数中的两个,即德拜温度和4 K时的能量带隙,从文献数据中固定。
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来源期刊
Materials Letters
Materials Letters 工程技术-材料科学:综合
CiteScore
5.60
自引率
3.30%
发文量
1948
审稿时长
50 days
期刊介绍: Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials. Contributions include, but are not limited to, a variety of topics such as: • Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors • Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart • Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction • Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots. • Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing. • Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic • Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive
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