Tianbao Chen , Dong Yang , Haobin Li , Qin Liu , Zhaokun Cai , Chaoming Chen , Dongwei Ao , Hongli Ma , Xianghua Zhang
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引用次数: 0
Abstract
Effective control of charge carriers is crucial for achieving high thermoelectric performance. In this study, β-Cu2Se (high-temperature phase) thin films were fabricated via in situ magnetron sputtering. The influence of aluminum (Al) doping on the crystal structure, electronic band structure, and carrier transport behavior of β-Cu2Se was systematically investigated. Al doping was found to modulate the crystal structure, inducing a partial phase transition to the α-Cu2Se phase. Moreover, Al incorporation can modify the electronic band structure and reduce the carrier concentration in p-type β-Cu2Se, leading to an increased Seebeck coefficient. Benefiting from the intrinsically high electrical conductivity of β-Cu2Se and the synergistic effects of Al doping, a maximum power factor of 5.37 μW cm−1 K−2 at 573 K was achieved at an Al doping level of 3.53 at.%. These results demonstrate the effectiveness of Al doping in enhancing β-Cu2Se thermoelectric power factor.
期刊介绍:
The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results.
Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)