A Millimeter-Wave Analog–Digital Variable Capacitor With High Tuning Ratio Realized by Monolithic Integration of BST Varactors and GeTe Switches

0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2025-03-19 DOI:10.1109/LMWT.2025.3565182

Mehran Golcheshmeh;Raafat R. Mansour

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引用次数: 0

Abstract

This letter presents an analog–digital variable capacitor realized by monolithic integration of barium strontium titanate (BST) ferroelectric material and phase change material (PCM) technologies. The proposed concept enables the creation of tunable components with high performance at microwave and millimeter-wave frequencies, addressing the challenging need for large tuning range and fine resolution, with minimal loss. This letter presents the fabrication and analysis of an analog–digital variable capacitor with a size of

$80 \times 120~\mu \text {m}$

, comprising three BST analog variable capacitor monolithically integrated with three PCM germanium telluride (GeTe) switches. The measurement results for the integrated analog–digital variable capacitor show a tuning ratio of 1:10.8 with an analog resolution over a wide frequency range, while having a quality factor of 12.5 at 30 GHz. To our knowledge, this letter represents the first demonstration of monolithic integration of BST and PCM technologies.

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利用BST变容管和GeTe开关的单片集成实现了一种高调谐比的毫米波模数变电容

本文介绍了一种由钛酸锶钡（BST）铁电材料和相变材料（PCM）技术集成而成的模数可变电容器。提出的概念可以创建在微波和毫米波频率下具有高性能的可调谐元件，以最小的损耗解决大调谐范围和精细分辨率的挑战性需求。本文介绍了一种尺寸为$80 \ × 120~\mu \text {m}$的模数可变电容器的制造和分析，该电容器由三个BST模拟可变电容器单片集成三个PCM碲化锗（GeTe）开关组成。测量结果表明，该集成模数可变电容的调谐比为1:10.8，在宽频率范围内具有模拟分辨率，而在30 GHz时具有12.5的质量因子。据我们所知，这封信代表了BST和PCM技术的单片集成的第一个演示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

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