Song Hang Chai;Hyunsu Chae;Hao Yu;David Z. Pan;Sensen Li
{"title":"A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks","authors":"Song Hang Chai;Hyunsu Chae;Hao Yu;David Z. Pan;Sensen Li","doi":"10.1109/LMWT.2025.3566666","DOIUrl":null,"url":null,"abstract":"This work presents a high-efficiency D-band power amplifier (PA) implemented in 250-nm indium phosphide (InP) technology. A key innovation is the integration of artificial intelligence (AI) into the radio frequency power amplifier (RFPA) design flow for the automated generation of passive networks—a traditionally labor- and computation-intensive process. By utilizing a machine learning (ML) model as a surrogate for time-consuming electromagnetic (EM) solvers, this approach enables rapid exploration of a broader design space, improving productivity and uncovering potentially nonintuitive structures. The physics augmentation in the ML model mitigates its dependence on big training datasets, achieving an <italic>S</i>-parameter prediction error of less than 0.5 dB at the target frequency of 125 GHz. Using fully AI-generated passive networks, the PA delivers a saturated output power (<inline-formula> <tex-math>${P} _{\\text {sat}}$ </tex-math></inline-formula>) of 15.3 dBm and a peak power-added efficiency (PAE) of 26%. Additionally, it achieves a peak gain of 12.7 dB and a 3-dB bandwidth spanning 110–140 GHz and demonstrates its capability to support high-order quadrature amplitude modulation (QAM) signals at tens of Gb/s data rates.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"824-827"},"PeriodicalIF":0.0000,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11015614/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents a high-efficiency D-band power amplifier (PA) implemented in 250-nm indium phosphide (InP) technology. A key innovation is the integration of artificial intelligence (AI) into the radio frequency power amplifier (RFPA) design flow for the automated generation of passive networks—a traditionally labor- and computation-intensive process. By utilizing a machine learning (ML) model as a surrogate for time-consuming electromagnetic (EM) solvers, this approach enables rapid exploration of a broader design space, improving productivity and uncovering potentially nonintuitive structures. The physics augmentation in the ML model mitigates its dependence on big training datasets, achieving an S-parameter prediction error of less than 0.5 dB at the target frequency of 125 GHz. Using fully AI-generated passive networks, the PA delivers a saturated output power (${P} _{\text {sat}}$ ) of 15.3 dBm and a peak power-added efficiency (PAE) of 26%. Additionally, it achieves a peak gain of 12.7 dB and a 3-dB bandwidth spanning 110–140 GHz and demonstrates its capability to support high-order quadrature amplitude modulation (QAM) signals at tens of Gb/s data rates.