A 335-GHz Subharmonic Quadrature Mixer MMIC Based on GaAs Schottky Diode Technology

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Songzhuo Liu;Gang Gao;Bin Niu;Weihua Yu
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引用次数: 0

Abstract

This letter presents a 335-GHz quadrature mixer with monolithic microwave integrated circuit (MMIC) utilizing the GaAs Schottky diode technology. By using two identical double-sideband (DSB) subharmonic mixer units and a 90° phase shift line co-designed with an on-chip double-RF probe, a quadrature phase relationship downconversion is achieved on a single GaAs chip. The conversion loss of the mixer is approximately 16 dB in the 330–350-GHz frequency range. The amplitude imbalance is less than 3 dB within the 333–342-GHz range, while the phase imbalance is less than 10° in the 330–340-GHz range. The quadrature mixer exhibits a reasonable performance with an MMIC structure and the smallest chip area compared with mixers made by two substrates.
基于GaAs肖特基二极管技术的335 ghz亚谐波正交混频器MMIC
本文介绍了一种采用GaAs肖特基二极管技术的单片微波集成电路(MMIC)的335 ghz正交混频器。通过使用两个相同的双边带(DSB)次谐波混频器单元和与片上双射频探头共同设计的90°相移线,在单个GaAs芯片上实现了正交相位关系下变频。在330-350-GHz频率范围内,混频器的转换损耗约为16 dB。在333 ~ 342 ghz范围内,幅值不平衡小于3 dB,在330 ~ 340 ghz范围内,相位不平衡小于10°。与双基片混频器相比,该正交混频器具有MMIC结构和最小的芯片面积,性能合理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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