An Asymmetric Cascode Doherty Power Amplifier With a Transformer-Based Combiner in 65-nm CMOS

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Yuting Chen, Qing Guo, Yue Ma, Gang Wang, Bo Wu, Xianliang Wu
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Abstract

In this study, we present a high-power back-off (PBO) efficiency asymmetric Doherty power amplifier (Doherty PA), featuring compact transformer-based input/output matching networks. The series output combiner, meticulously designed for asymmetric power ratio synthesis, integrates impedance inverters into the power combiner. This design significantly boosts power additional efficiency within a 9-dB PBO range. The integration of a quarter-wavelength phase compensation circuit and a quadrature power divider, both designed based on transformer structure, effectively minimizes the core chip area. Furthermore, the incorporation of neutralizing capacitor technology within the cascode structure has significantly enhanced gain and stability. The designed Doherty PA is manufactured by 65 nm CMOS technology, achieving 23.2 dBm saturated output power (Psat) with 28.2% peak power added efficiency (PAE), and 22.4 dBm 1-dB output compression point (OP1dB) at 38 GHz. The measured PAE at 9-dB PBO efficiency is 16.1%. These figures result in an efficiency enhancement ratio of 1.78 when compared to an ideal class-B PA.

非对称级联多赫蒂功率放大器与65纳米CMOS变压器为基础的组合
在这项研究中,我们提出了一种大功率回退(PBO)效率不对称Doherty功率放大器(Doherty PA),具有紧凑的基于变压器的输入/输出匹配网络。该系列输出合成器为非对称功率比合成精心设计,将阻抗逆变器集成到功率合成器中。这种设计在9 db PBO范围内显著提高了功率附加效率。基于变压器结构设计的四分之一波长相位补偿电路和正交功率分压器的集成,有效地减小了核心芯片面积。此外,在级联码结构中加入中和电容器技术显著提高了增益和稳定性。所设计的Doherty PA采用65 nm CMOS技术制造,在38 GHz时可实现23.2 dBm的饱和输出功率(Psat)和28.2%的峰值功率附加效率(PAE),以及22.4 dBm的1 db输出压缩点(OP1dB)。在9 db PBO效率下测量的PAE为16.1%。与理想的b类PA相比,这些数字导致的效率提高比为1.78。
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来源期刊
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters 工程技术-工程:电子与电气
CiteScore
3.40
自引率
20.00%
发文量
371
审稿时长
4.3 months
期刊介绍: Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication
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