Sonja Kürten, Kimia Hashemizadeh, Mingjian Wu, Johannes Will, Ivan Kundrata, Erdmann Spiecker and Julien Bachmann
{"title":"Direct-patterning SnO2 deposition by atomic-layer additive manufacturing†","authors":"Sonja Kürten, Kimia Hashemizadeh, Mingjian Wu, Johannes Will, Ivan Kundrata, Erdmann Spiecker and Julien Bachmann","doi":"10.1039/D5MA00182J","DOIUrl":null,"url":null,"abstract":"<p >The ALD precursor tetrakis(dimethylamido)tin and water are exploited towards the atomic-layer additive manufacturing (ALAM) of SnO<small><sub>2</sub></small> lines. ALAM exploits the surface chemistry principles of ALD (atomic layer depositions) but adds a laterally constrained precursor delivery. Motion of the precursor delivery nozzle over the substrate surface thus deposits the material in a 3D printing mode while maintaining the sub-nanometers thickness control of ALD. We find that the precursor canister temperature can be lowered by approximately 20 °C from ALD to ALAM, corresponding to a lower precursor consumption. The temperature window of controlled deposition reaches from 150 °C to 250 °C, whereas 200 °C yields the best stoichiometry and highest growth rate. The material is amorphous initially and crystallizes upon annealing at 500 °C in N<small><sub>2</sub></small> or air. The lines deposited have a flat top profile and a constant thickness along their length.</p>","PeriodicalId":18242,"journal":{"name":"Materials Advances","volume":" 12","pages":" 3998-4002"},"PeriodicalIF":4.7000,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/ma/d5ma00182j?page=search","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Advances","FirstCategoryId":"1085","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/ma/d5ma00182j","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The ALD precursor tetrakis(dimethylamido)tin and water are exploited towards the atomic-layer additive manufacturing (ALAM) of SnO2 lines. ALAM exploits the surface chemistry principles of ALD (atomic layer depositions) but adds a laterally constrained precursor delivery. Motion of the precursor delivery nozzle over the substrate surface thus deposits the material in a 3D printing mode while maintaining the sub-nanometers thickness control of ALD. We find that the precursor canister temperature can be lowered by approximately 20 °C from ALD to ALAM, corresponding to a lower precursor consumption. The temperature window of controlled deposition reaches from 150 °C to 250 °C, whereas 200 °C yields the best stoichiometry and highest growth rate. The material is amorphous initially and crystallizes upon annealing at 500 °C in N2 or air. The lines deposited have a flat top profile and a constant thickness along their length.