E. Amat , C. Martínez-Domingo , C. Fleta , M. Mas-Torrent , M. Lozano
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引用次数: 0
Abstract
RADFETs are a low-cost option for implementing a radiation sensor. The characteristics of their gate dielectric material is the key element due to its sensitivity to ionizing radiation. We have studied alternative (high-K and organic) materials to the conventional SiO2-based gate dielectric in order to improve the device performance. Electrical characterization in irradiated samples has been carried on to study the radiation response of each material to low levels of ionizing radiation. The HfO2-based samples have a much higher sensitivity per unit thickness than the SiO2-based ones. High-K based RADFETs show promising performance as gate dielectrics for future silicon based radiation sensors.
期刊介绍:
Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.