Hao Xu , ZiYuan Liu , NaiXin Liu , Bing Wang , Tong Zhang , WeiLing Guo , Jie Sun , AoQi Fang , JiXin Liu
{"title":"A novel intermittent mesa structure with an Rh reflective layer and sloped sidewalls for high-power DUV LEDs","authors":"Hao Xu , ZiYuan Liu , NaiXin Liu , Bing Wang , Tong Zhang , WeiLing Guo , Jie Sun , AoQi Fang , JiXin Liu","doi":"10.1016/j.optcom.2025.132105","DOIUrl":null,"url":null,"abstract":"<div><div>The light extraction efficiency (LEE) of deep ultraviolet light-emitting diodes (DUV-LEDs) can be effectively improved by reflecting photons to the substrate side of the device through the optical waveguide modulation technique on the sloped sidewall. In this paper, by choosing different mask materials and adjusting the mask thickness, the angles of the mesa sidewalls (30°, 45°, 70°) were precisely controlled during etching. We thoroughly analyzed the performance of devices with these varied sidewall angles through experimental measurements and simulations, elucidating the impact of mask material and thickness on sidewall angles. More importantly, this paper has introduced an intermittent mesa structure based on 45° sloped sidewalls, which is able to increase the sidewall area of the device while effectively guaranteeing the integrity of the mesa. Meanwhile, the device used Ni/Rh/Ti as both p electrode and sidewall reflective layer, and the prepared devices show excellent performance with a radiant flux of 183.98 mW (@500 mA) and a wall-pull efficiency (WPE) of 7.33 % (@250 mA).</div></div>","PeriodicalId":19586,"journal":{"name":"Optics Communications","volume":"591 ","pages":"Article 132105"},"PeriodicalIF":2.2000,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030401825006339","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
The light extraction efficiency (LEE) of deep ultraviolet light-emitting diodes (DUV-LEDs) can be effectively improved by reflecting photons to the substrate side of the device through the optical waveguide modulation technique on the sloped sidewall. In this paper, by choosing different mask materials and adjusting the mask thickness, the angles of the mesa sidewalls (30°, 45°, 70°) were precisely controlled during etching. We thoroughly analyzed the performance of devices with these varied sidewall angles through experimental measurements and simulations, elucidating the impact of mask material and thickness on sidewall angles. More importantly, this paper has introduced an intermittent mesa structure based on 45° sloped sidewalls, which is able to increase the sidewall area of the device while effectively guaranteeing the integrity of the mesa. Meanwhile, the device used Ni/Rh/Ti as both p electrode and sidewall reflective layer, and the prepared devices show excellent performance with a radiant flux of 183.98 mW (@500 mA) and a wall-pull efficiency (WPE) of 7.33 % (@250 mA).
期刊介绍:
Optics Communications invites original and timely contributions containing new results in various fields of optics and photonics. The journal considers theoretical and experimental research in areas ranging from the fundamental properties of light to technological applications. Topics covered include classical and quantum optics, optical physics and light-matter interactions, lasers, imaging, guided-wave optics and optical information processing. Manuscripts should offer clear evidence of novelty and significance. Papers concentrating on mathematical and computational issues, with limited connection to optics, are not suitable for publication in the Journal. Similarly, small technical advances, or papers concerned only with engineering applications or issues of materials science fall outside the journal scope.