Synthesis of MnCl2 and VCl2 doped CH3NH3PbI3 for low operating voltage resistive switching memory devices

Abstract

This article reports resistive switching (RS) performance of Mn²⁺ and V²⁺ partially doped CH₃NH₃PbI₃ (MAPbI₃). The effects of MnCl₂ and VCl₂ doping on the crystal structure, chemical bonding, and optical properties of the MAPbI₃ thin films are studied. The RS devices fabricated using doped MAPbI₃ shows better RS performance, including lower switching potential, a larger ON/OFF ratio, better cyclic stability and repeatability. In the fabricated RS devices, the conduction of charge carriers takes place through Ohmic and space charge limited current (SCLC) mechanisms. This study can be used to optimize the performance of the MAPbI₃ based RS devices with a lower operating voltage. The results suggest that the MnCl₂ doped MAPbI₃ has great potential for the fabrication of high performance RS memory devices.