Highly efficient electroluminescence from Si quantum dot/SiO2 multilayer light-emitting devices via phosphorus/boron co-doping and surface nano-structuring.
Junnan Han, Yuhao Wang, Jiaming Chen, Teng Sun, Dongke Li, Wei Li, Ling Xu, Jun Xu, Kunji Chen
{"title":"Highly efficient electroluminescence from Si quantum dot/SiO<sub>2</sub> multilayer light-emitting devices via phosphorus/boron co-doping and surface nano-structuring.","authors":"Junnan Han, Yuhao Wang, Jiaming Chen, Teng Sun, Dongke Li, Wei Li, Ling Xu, Jun Xu, Kunji Chen","doi":"10.1364/OL.566303","DOIUrl":null,"url":null,"abstract":"<p><p>Enhancing emission efficiency presents a challenge for Si-based light emission devices in all-silicon monolithic optoelectronic integration. This study introduces phosphorus (P)/boron (B) co-doping to significantly increase the electroluminescence intensity of Si quantum dots (QDs)-nearly tenfold compared to undoped devices. The turn-on voltage drops from 15 V for undoped to 6 V for co-doped devices and further reduces to 3 V with a nanostructured Si substrate to improve light extraction efficiency. The redshift of electroluminescence peak after co-doping is also observed, and the possible mechanism is briefly discussed. Stability tests show power efficiency up to 1.02% and maximum external quantum efficiency of 4.9%. These findings demonstrate the superior optoelectronic quality and stability of silicon nanomaterial-based devices, highlighting their potential in integrated silicon photonics.</p>","PeriodicalId":19540,"journal":{"name":"Optics letters","volume":"50 12","pages":"3927-3930"},"PeriodicalIF":3.1000,"publicationDate":"2025-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1364/OL.566303","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
Enhancing emission efficiency presents a challenge for Si-based light emission devices in all-silicon monolithic optoelectronic integration. This study introduces phosphorus (P)/boron (B) co-doping to significantly increase the electroluminescence intensity of Si quantum dots (QDs)-nearly tenfold compared to undoped devices. The turn-on voltage drops from 15 V for undoped to 6 V for co-doped devices and further reduces to 3 V with a nanostructured Si substrate to improve light extraction efficiency. The redshift of electroluminescence peak after co-doping is also observed, and the possible mechanism is briefly discussed. Stability tests show power efficiency up to 1.02% and maximum external quantum efficiency of 4.9%. These findings demonstrate the superior optoelectronic quality and stability of silicon nanomaterial-based devices, highlighting their potential in integrated silicon photonics.
期刊介绍:
The Optical Society (OSA) publishes high-quality, peer-reviewed articles in its portfolio of journals, which serve the full breadth of the optics and photonics community.
Optics Letters offers rapid dissemination of new results in all areas of optics with short, original, peer-reviewed communications. Optics Letters covers the latest research in optical science, including optical measurements, optical components and devices, atmospheric optics, biomedical optics, Fourier optics, integrated optics, optical processing, optoelectronics, lasers, nonlinear optics, optical storage and holography, optical coherence, polarization, quantum electronics, ultrafast optical phenomena, photonic crystals, and fiber optics. Criteria used in determining acceptability of contributions include newsworthiness to a substantial part of the optics community and the effect of rapid publication on the research of others. This journal, published twice each month, is where readers look for the latest discoveries in optics.