{"title":"In-situ experimental study on the microstructure evolution of AlN-Cu composite during microwave sintering","authors":"Xiao Wang, Yu Xiao, Yuan Ren, Liangyuan Wang, Xiaofang Hu, Feng Xu","doi":"10.1016/j.mseb.2025.118519","DOIUrl":null,"url":null,"abstract":"<div><div>Due to its combination of high thermal conductivity and electrical conductivity, the AlN-Cu composite material exhibits enormous application potential in the field of electronic packaging. Its interfacial properties directly determine the reliability of devices. In this study, microwave sintering and a rapid SR-CT in-situ device were used to real-timely observe the entire process of microstructural evolution in AlN-Cu materials. The research found that microwave sintering can achieve bonding at 600℃ within 6 min to form an intermediate phase of CuAlO<sub>2</sub>; The initial volume of copper particles regulates the reaction rate by influencing the effective microwave volume. The difference in dielectric constant between AlN and Cu triggers interfacial polarization, reconstructs the microwave energy distribution, and accelerates the reaction. When the radius ratio of Cu to AlN particles is close to 1, the actual microwave heating efficiency is the highest; there exists an optimal radius ratio (R<sub>Cu</sub>:R<sub>AlN</sub> = 1) that maximizes the actual thermal power, balancing electric field enhancement and effective volume attenuation. This study provides a fundamental reference for designing the particle size of AlN-Cu composite materials and optimizing the microwave sintering process.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"321 ","pages":"Article 118519"},"PeriodicalIF":3.9000,"publicationDate":"2025-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725005434","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Due to its combination of high thermal conductivity and electrical conductivity, the AlN-Cu composite material exhibits enormous application potential in the field of electronic packaging. Its interfacial properties directly determine the reliability of devices. In this study, microwave sintering and a rapid SR-CT in-situ device were used to real-timely observe the entire process of microstructural evolution in AlN-Cu materials. The research found that microwave sintering can achieve bonding at 600℃ within 6 min to form an intermediate phase of CuAlO2; The initial volume of copper particles regulates the reaction rate by influencing the effective microwave volume. The difference in dielectric constant between AlN and Cu triggers interfacial polarization, reconstructs the microwave energy distribution, and accelerates the reaction. When the radius ratio of Cu to AlN particles is close to 1, the actual microwave heating efficiency is the highest; there exists an optimal radius ratio (RCu:RAlN = 1) that maximizes the actual thermal power, balancing electric field enhancement and effective volume attenuation. This study provides a fundamental reference for designing the particle size of AlN-Cu composite materials and optimizing the microwave sintering process.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.