{"title":"Anisotropic Photoelectric Properties of Aligned P3HT Nanowire Arrays Fabricated via Solution Blade Coating and UV-Induced Molecular Ordering.","authors":"Qianxun Gong, Jin Luo, Chen Meng, Zuhong Xiong, Sijie Zhang, Tian Yu","doi":"10.3390/ma18112649","DOIUrl":null,"url":null,"abstract":"<p><p>This paper reports on the anisotropic optoelectronic properties of aligned poly(3-hexylthiophene) (P3HT) nanowire (NW) arrays fabricated via blade coating and UV irradiation, exhibiting a remarkably high electrical resistance anisotropy ratio of up to 8.05 between the parallel (0°) and perpendicular (90°) directions. This resistance anisotropy originates from the advantage of directional charge transport. Optimized 5 mg/mL P3HT solutions under 32 min UV irradiation yielded unidirectional π-π*-stacked NWs with enhanced crystallinity. Polarized microscopy and atomic force microscopy confirmed high alignment and dense NW networks. The angular dependence of polarization exhibits a cosine-modulated response, while the angular anisotropy of the measured photocurrent points to structural alignment rather than trap-state control. The scalable fabrication and tunable anisotropy demonstrate potential for polarization-sensitive organic electronics and anisotropic logic devices.</p>","PeriodicalId":18281,"journal":{"name":"Materials","volume":"18 11","pages":""},"PeriodicalIF":3.1000,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12155983/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3390/ma18112649","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports on the anisotropic optoelectronic properties of aligned poly(3-hexylthiophene) (P3HT) nanowire (NW) arrays fabricated via blade coating and UV irradiation, exhibiting a remarkably high electrical resistance anisotropy ratio of up to 8.05 between the parallel (0°) and perpendicular (90°) directions. This resistance anisotropy originates from the advantage of directional charge transport. Optimized 5 mg/mL P3HT solutions under 32 min UV irradiation yielded unidirectional π-π*-stacked NWs with enhanced crystallinity. Polarized microscopy and atomic force microscopy confirmed high alignment and dense NW networks. The angular dependence of polarization exhibits a cosine-modulated response, while the angular anisotropy of the measured photocurrent points to structural alignment rather than trap-state control. The scalable fabrication and tunable anisotropy demonstrate potential for polarization-sensitive organic electronics and anisotropic logic devices.
期刊介绍：
Materials (ISSN 1996-1944) is an open access journal of related scientific research and technology development. It publishes reviews, regular research papers (articles) and short communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. Therefore, there is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced. Materials provides a forum for publishing papers which advance the in-depth understanding of the relationship between the structure, the properties or the functions of all kinds of materials. Chemical syntheses, chemical structures and mechanical, chemical, electronic, magnetic and optical properties and various applications will be considered.
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