Exploring phase transition effects on current voltage hysteresis in novel CuSnI 3

Abstract

The perovskite halides have attracted significant attention due to their remarkable optoelectronic properties, making them promising candidates for various applications such as solar cells, light-emitting diodes, and photodetectors. A notable phenomenon in these materials is photoelectric hysteresis, where photoresponse exhibits dependence on prior light exposure and electric fields. This behavior is influenced by factors such as ion migration, defect states, and trap-assisted recombination. However, the impact of phase transitions on photoelectric hysteresis remains underexplored. The phase transitions can significantly alter electronic properties and defect landscapes, influencing the photoelectric response. This study focuses on CuSnI₃to investigate its photoelectric hysteresis behavior in non-centrosymmetric phases. CuSnI₃ crystallizes in a triclinic P₃m1 space group at 300 K, with a direct band gap of $\sim$2.13 eV. We explore its structural phase transitions and their effects on hysteresis through I–V and conductivity measurements. The understanding of these effects is essential for improving the performance and stability of perovskite-based devices.