Yanhu Li , Cun Hu , Yuanfen Cheng , Zhen Lei , Hongya Li
{"title":"Efficient purification of impurities from depleted uranium chips by hydrogen plasma arc melting","authors":"Yanhu Li , Cun Hu , Yuanfen Cheng , Zhen Lei , Hongya Li","doi":"10.1016/j.vacuum.2025.114501","DOIUrl":null,"url":null,"abstract":"<div><div>Recycling and utilization of depleted uranium (DU) chips is highly significant for the development of nuclear energy and environmental safety. In this paper, the removal of non-metallic and metallic impurities from DU chips by plasma arc melting with pure Ar (PAM) and H<sub>2</sub>-Ar mixture (HPAM) was examined, respectively. Experimental results demonstrate that HPAM exhibits a significantly superior impurity removal effect compared to PAM. Notably, the average removal degree of non-metallic impurities in DU chips using HPAM with a 20 % H<sub>2</sub>-Ar mixture gas for 30 min can reach 82.8 %, which is much higher than 10.9 % achieved by PAM. Meanwhile, average removal degree of metallic impurities increased from 37.9 % for PAM to 67.5 % for HPAM. Therefore, HPAM can rapidly and efficiently remove non-metallic and metallic impurities from DU chips, thereby promoting the recycling and reuse of DU materials, and providing a reliable guarantee for the development of nuclear energy and environmental safety.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114501"},"PeriodicalIF":3.8000,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25004919","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Recycling and utilization of depleted uranium (DU) chips is highly significant for the development of nuclear energy and environmental safety. In this paper, the removal of non-metallic and metallic impurities from DU chips by plasma arc melting with pure Ar (PAM) and H2-Ar mixture (HPAM) was examined, respectively. Experimental results demonstrate that HPAM exhibits a significantly superior impurity removal effect compared to PAM. Notably, the average removal degree of non-metallic impurities in DU chips using HPAM with a 20 % H2-Ar mixture gas for 30 min can reach 82.8 %, which is much higher than 10.9 % achieved by PAM. Meanwhile, average removal degree of metallic impurities increased from 37.9 % for PAM to 67.5 % for HPAM. Therefore, HPAM can rapidly and efficiently remove non-metallic and metallic impurities from DU chips, thereby promoting the recycling and reuse of DU materials, and providing a reliable guarantee for the development of nuclear energy and environmental safety.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.