Lead-Free Copper Halide LEDs: Leapfrogging in Performance with Device Engineering Employing Coevaporation of Precursors with Nanoscale Process Control

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Anjali K. Sajeev, Kavya Rajeev and K. N. Narayanan Unni*, 
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Abstract

Lead-free copper halide light-emitting diodes (LEDs) have emerged as a promising alternative to perovskite LEDs, particularly in the context of environmental challenges. This study investigates the performance enhancement of cesium copper iodide (CsCu2I3) LEDs through device engineering techniques, including precursor coevaporation, cohost engineering, and process optimization. Coevaporation of cesium iodide (CsI) and copper iodide (CuI) offers better control over film composition compared with conventional techniques such as wet chemical synthesis or solution processing, thereby simplifying the device fabrication. This dry deposition method minimizes issues related to solvent residues and simplifies the fabrication process. Incorporating the cohosts, 1,3,5-tri(m-pyridin-3-ylphenyl)benzene (TmPyPB) and 4,4’,4-tris(carbazol-9-yl)triphenylamine (TcTa), in the emissive layer improves charge balancing and film formation, enhancing overall performance. The optimal results were achieved with a 6:1 cohost ratio and a 2.5% CsCu2I3 doping ratio, resulting in a maximum luminance of 6278 cd/m2, a current efficiency (CE) of 4.14 cd/A, a power efficiency (PE) of 1.22 lm/W, and an external quantum efficiency (EQE) of 1.44%. The substrate temperature of 60 °C further influenced device performance, with almost 50% improvement in EQE, reaching 2.14%. The device improvements are a result of the nanoscale control over film morphology, composition, and interface quality enabled using controlled coevaporation. Overall, this study highlights the potential of coevaporation of precursors with cohosts and the benefits of substrate temperature in fabricating high-performance and stable CsCu2I3-based LEDs.

无铅卤化铜led:利用纳米级工艺控制前驱体共蒸发的器件工程实现性能跨越式发展
无铅卤化铜发光二极管(led)已经成为钙钛矿led的一个有前途的替代品,特别是在环境挑战的背景下。本研究通过器件工程技术,包括前驱体共蒸发、共宿主工程和工艺优化,研究了碘化铯铜(CsCu2I3) led的性能增强。与传统技术(如湿化学合成或溶液处理)相比,碘化铯(CsI)和碘化铜(CuI)的共蒸发可以更好地控制膜的组成,从而简化了器件的制造。这种干沉积方法最大限度地减少了与溶剂残留有关的问题,并简化了制造过程。在发射层中加入1,3,5-三(m-吡啶-3-基苯基)苯(TmPyPB)和4,4 ',4-三(咔唑-9-基)三苯胺(TcTa),改善了电荷平衡和薄膜形成,提高了整体性能。当共主比为6:1、CsCu2I3掺杂比为2.5%时,器件的最大亮度为6278 cd/m2,电流效率(CE)为4.14 cd/ a,功率效率(PE)为1.22 lm/W,外量子效率(EQE)为1.44%。60℃的衬底温度进一步影响器件性能,EQE提高近50%,达到2.14%。器件的改进是通过控制共蒸发实现对膜形态、组成和界面质量的纳米级控制的结果。总的来说,这项研究强调了前驱体与共主体共蒸发的潜力,以及衬底温度在制造高性能和稳定的基于cscu2i3的led方面的好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
8.30
自引率
3.40%
发文量
1601
期刊介绍: ACS Applied Nano Materials is an interdisciplinary journal publishing original research covering all aspects of engineering, chemistry, physics and biology relevant to applications of nanomaterials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important applications of nanomaterials.
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