A Novel Approach for Analysis of Rocking Curve X-Ray Diffraction Imaging Data (RC-XRDI) on 4H-SiC Using Cumulative Integrated Intensity (CII) Method.

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Electronic Materials Pub Date : 2025-01-01 Epub Date: 2025-05-09 DOI:10.1007/s11664-025-11963-y
Arash Estiri, Richard Bytheway, Tamzin Amanda Lafford, Oliver James Louis Fox, Andrew Graham, Claire Hurley, Vishal Ajit Shah
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引用次数: 0

Abstract

This paper presents a novel method of using cumulative integrated intensity (CII) to analyse rocking curve x-ray diffraction imaging (RC-XRDI) data. This method overcomes several limitations of traditional complex non-ideal curve fitting, which often results in inaccurate peak detection and full width at half maximum (FWHM) extraction. These complex non-ideal rocking curves arise in cases where additional features are present, such as peak splitting and multiple peaks. The application of the method also avoids the need for curve fitting and time-consuming calculations, allowing the extraction of peak widths at various normalized height-intensities (FWxM) and revealing extra information about defects. By analysing the broadening and peak position of the rocking curves for different defects, RC-XRDI provides insights into the nature and distribution of these defects within the material. Applied to RC-XRDI of a 4H-SiC 10 μm-thick homo-epitaxial layer on a substrate, the CII method was used to detect shifts in peak position and generate maps of full width at 1%, 10%, and 50% of maximum intensity, offering a detailed view of defect-induced broadening. Our results demonstrate that the CII method provides improved accuracy and requires fewer computations compared to curve-fitting techniques, making it particularly useful where precise defect characterization is critical. Moreover, background intensity was detected pixel-by-pixel using cubic smoothing splines, and the CII method provided robust validation for the precision of this background detection.

利用累积积分强度(CII)法分析4H-SiC的摇摆曲线x射线衍射成像数据(RC-XRDI)
本文提出了一种利用累积积分强度(CII)分析摇摆曲线x射线衍射成像(RC-XRDI)数据的新方法。该方法克服了传统复杂非理想曲线拟合的局限性,克服了传统复杂非理想曲线拟合往往导致峰检测和半峰全宽提取不准确的缺点。这些复杂的非理想摇摆曲线出现在存在额外特征的情况下,例如峰分裂和多峰。该方法的应用还避免了对曲线拟合和耗时计算的需要,允许在各种归一化高度强度(FWxM)下提取峰宽度,并揭示有关缺陷的额外信息。通过分析不同缺陷的摆动曲线的展宽和峰值位置,RC-XRDI提供了对材料中这些缺陷的性质和分布的见解。应用于衬底上10 μm厚的4H-SiC同质外延层的RC-XRDI, CII方法检测了峰值位置的变化,并生成了最大强度为1%,10%和50%的全宽度图,提供了缺陷引起的展宽的详细视图。我们的结果表明,与曲线拟合技术相比,CII方法提供了更高的精度,并且需要更少的计算,这使得它在精确的缺陷表征至关重要的地方特别有用。此外,利用三次光滑样条对背景强度进行逐像素检测,CII方法为背景强度检测的精度提供了鲁棒性验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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