{"title":"Low-temperature microwave annealing stabilizes the morphotropic phase boundary in HfO2/ZrO2 superlattice heterostructures","authors":"Chen-You Wei, Yu-Hong Chen, Tzu-I Kao, Cheng-En Wu, Chao-Wei Wu, Heng-Jia Chang, Yi-Ju Yao, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu","doi":"10.1063/5.0264349","DOIUrl":null,"url":null,"abstract":"This study presents a method for achieving stable morphotropic phase boundary characteristics in superlattice HfO2/ZrO2 (SL-HZO)-based metal-ferroelectric-metal (MFM) capacitors using low-temperature microwave annealing (MWA) technology. Compared to conventional rapid thermal annealing, MWA-treated SL-HZO-based MFM capacitors exhibit excellent dielectric properties (κ = 51) at reduced processing temperatures. These devices also demonstrate improved reliability, including lower leakage current, higher breakdown strength, and an operational lifetime exceeding 10 years at voltages up to 2.54 V. This approach mitigates thermal budget limitations in back-end-of-line processes while enhancing device performance, offering a promising solution for advanced integrated circuit applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"51 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0264349","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
This study presents a method for achieving stable morphotropic phase boundary characteristics in superlattice HfO2/ZrO2 (SL-HZO)-based metal-ferroelectric-metal (MFM) capacitors using low-temperature microwave annealing (MWA) technology. Compared to conventional rapid thermal annealing, MWA-treated SL-HZO-based MFM capacitors exhibit excellent dielectric properties (κ = 51) at reduced processing temperatures. These devices also demonstrate improved reliability, including lower leakage current, higher breakdown strength, and an operational lifetime exceeding 10 years at voltages up to 2.54 V. This approach mitigates thermal budget limitations in back-end-of-line processes while enhancing device performance, offering a promising solution for advanced integrated circuit applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.