Behnam Zeinalvand Farzin , Geun Hyeong Kim , S. Bahareh Seyedein Ardebili , Tae In Kang , Gyoung Du Park , Jong Su Kim , Sang Jun Lee
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引用次数: 0
Abstract
We investigate the influence of absorber layer thickness on the optical and electrical performance of single-junction GaAs solar cells through comprehensive photoluminescence and photoreflectance spectroscopy, supported by theoretical analysis. Four samples with base layer thicknesses ranging from 1 to 2.5 μm were studied using power- and temperature-dependent PL spectroscopy. The results indicate that radiative recombination is the dominant mechanism across all samples, with the 1.5 μm-thick base layer exhibiting the lowest activation energies. PR measurements were employed to evaluate electric field strength and carrier trapping dynamics within the depletion region. Among the samples, the 1.5 μm device demonstrated the strongest built-in electric field and the shortest trapping time. Correlation with previously reported electrical performance data confirms that the 1.5 μm base layer yields the highest open-circuit voltage, short-circuit current density, and overall conversion efficiency. These findings highlight the critical role of absorber thickness optimization in enhancing performance, offering deeper insights into the interdependence of optical and electrical properties. Furthermore, photoreflectance phase diagrams emerge as a simple and contactless method for assessing carrier trapping behavior and evaluating device performance.
期刊介绍:
The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid.
We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.