Optimized dose modulation for controlled greyscale electron beam lithography for negative tone resist

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Olli Ovaskainen, Tian-Long Guo, Matthieu Roussey
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Abstract

This study presents a systematic approach to optimizing dose modulation for precise greyscale electron beam lithography (EBL) using the negative tone resist AZ nLOF 2070. By establishing a correlation between local exposure dose and post-development resist height via the Rodbard equation, we generate dose distribution maps to guide the fabrication of complex micro-scale structures. A flood dose strategy is introduced to address underexposure in low-dose regions, significantly enhancing structural fidelity. Fabrication accuracy is quantitatively assessed through mean squared error (MSE) analysis, demonstrating high reproducibility across multiple samples and runs. Finally, the applicability of the method to nanoimprint lithography (NIL) is explored, highlighting its potential for scalable and precise greyscale patterning.

Abstract Image

控制灰阶电子束光刻负色调抗蚀剂的最佳剂量调制
本研究提出了一种系统的方法来优化精确灰度电子束光刻(EBL)的剂量调制,该方法使用负色调抗蚀剂AZ nLOF 2070。通过Rodbard方程建立局部暴露剂量与显影后抗蚀高度之间的关系,生成剂量分布图,指导复杂微尺度结构的制作。引入洪水剂量策略来解决低剂量区域的暴露不足问题,显著提高了结构保真度。通过均方误差(MSE)分析定量评估制造精度,证明了多个样品和运行的高再现性。最后,探讨了该方法在纳米压印(NIL)上的适用性,强调了其在可扩展和精确灰度图纹方面的潜力。
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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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