Moonsoo Kim, Hwan-gyu Lee, Junehyeong Cho, Kyeong-Bae Lee, Byoungdeog Choi
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引用次数: 0
Abstract
We present a significant breakthrough in the development of amorphous oxide semiconductor (AOS)-based thin-film transistors (TFTs), with particular emphasis on their potential for flexible and transparent electronic applications. Our work addresses the challenge of creating high-performance TFTs on flexible substrates, which require low-temperature processing owing to their material properties. By focusing on amorphous indium–gallium–tin oxide (a-IGTO) and leveraging the unique Ti–O bonding characteristics during sputtering, we successfully induced interstitial composition between a-IGTO and Titanium oxide (TiOx). This interaction generated oxygen vacancies that greatly improved the electrical performance of the ultra-thin AOS TFTs. Our results show that incorporating TiOx into a-IGTO during low-temperature fabrication leads to a substantial increase in electron concentration, resulting in over a 30-fold increase in mobility and more than a 50-fold improvement in on-current. Moreover, the controlled formation of vacancy traps was crucial for enhancing the illumination stability, as evidenced by in the reduced threshold voltage shifts and improved Ion/Ioff ratios under different illumination stresses. By addressing the inherent trade-off between the high-temperature annealing typically required for optimal TFT performance and the low-temperature processing essential for flexible substrates, the present study offers a promising strategy for producing high-performance AOS-based TFTs.
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.