Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States.

IF 9.6 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-06-06 DOI:10.1021/acs.nanolett.5c02180

Wei Pan, D Bruce Burckel, Catalin D Spataru, Keshab R Sapkota, Aaron J Muhowski, Samuel D Hawkins, John F Klem, Layla S Smith, Doyle A Temple, Zachery A Enderson, Zhigang Jiang, Komalavalli Thirunavukkuarasu, Li Xiang, Mykhaylo Ozerov, Dmitry Smirnov, Chang Niu, Peide D Ye, Praveen Pai, Fan Zhang

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Abstract

Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moiré superlattices (MSLs) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography-defined semiconductor MSLs, in which three fundamental parameters─electron-electron interaction, spin-orbit coupling, and band topology─are designable. We experimentally investigate quantum-transport properties in a moiré specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum-information and microelectronics technologies.

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具有异常隙内量子霍尔态的光刻定义半导体莫尔兹。

量子材料和现象因其在下一代微电子和量子信息技术中的潜在应用而引起了人们的极大兴趣。在一类特别有趣的量子材料中，由二维材料的扭曲双层形成的莫尔维尔超晶格（MSLs），观察到广泛的新现象。然而，由于二维MSLs的撕泪堆栈方法，在微电子和量子技术中利用其可重复性和可扩展性等方面存在令人生畏的挑战。在这里，我们提出了光刻定义的半导体MSLs，其中三个基本参数─电子-电子相互作用、自旋轨道耦合和能带拓扑─是可设计的。我们通过实验研究了在InAs量子阱中制作的波纹试样的量子输运特性。在相同的整数量子霍尔态中观察到强异常隙内态。我们的工作为研究半导体中的二维量子材料现象开辟了新的视野，这些现象具有卓越的工业水平质量和最先进的技术，并且它们可能潜在地实现新的量子信息和微电子技术。

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.