Yuxin Yue , Yonggang Zou , Jie Fan , Xiyao Fu , Naiyu Zhang , Yujun Guo , Yingmin Song , Zhuoer Huang , Bilin Ye , Xiaohui Ma , Xiaozhuo Wang , Biyao Cheng
{"title":"Monolithic dual-wavelength semiconductor laser based on varying ridge waveguide widths with passive surface DBR defined by UV lithography","authors":"Yuxin Yue , Yonggang Zou , Jie Fan , Xiyao Fu , Naiyu Zhang , Yujun Guo , Yingmin Song , Zhuoer Huang , Bilin Ye , Xiaohui Ma , Xiaozhuo Wang , Biyao Cheng","doi":"10.1016/j.optcom.2025.132086","DOIUrl":null,"url":null,"abstract":"<div><div>Dual-wavelength lasers are utilized in difference frequency terahertz generation and shifted excitation Raman difference spectroscopy. Semiconductor lasers can be used as an excitation light source for the above applications due to their small size, light weight and high conversion efficiency. A dual-wavelength semiconductor laser based on varying ridge waveguide widths with passive distributed Bragg reflector (DBR) gratings is demonstrated. The fabricated device exhibits a threshold current of approximately 30 mA at 15 °C. Under certain injection currents, stable dual-wavelength operation is observed, with lasing wavelengths centered at 796.8 nm and 797.4 nm, respectively, yielding a wavelength spacing of 0.6 nm. Furthermore, the proposed dual-wavelength laser possesses advantages including low threshold, excellent stability and short wavelength spacing. The manufacturing process of this device utilizes ultraviolet lithography, eliminating the need for secondary growth steps, thereby demonstrating immense market potential and competitiveness in the realm of commercial applications.</div></div>","PeriodicalId":19586,"journal":{"name":"Optics Communications","volume":"591 ","pages":"Article 132086"},"PeriodicalIF":2.2000,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030401825006145","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
Dual-wavelength lasers are utilized in difference frequency terahertz generation and shifted excitation Raman difference spectroscopy. Semiconductor lasers can be used as an excitation light source for the above applications due to their small size, light weight and high conversion efficiency. A dual-wavelength semiconductor laser based on varying ridge waveguide widths with passive distributed Bragg reflector (DBR) gratings is demonstrated. The fabricated device exhibits a threshold current of approximately 30 mA at 15 °C. Under certain injection currents, stable dual-wavelength operation is observed, with lasing wavelengths centered at 796.8 nm and 797.4 nm, respectively, yielding a wavelength spacing of 0.6 nm. Furthermore, the proposed dual-wavelength laser possesses advantages including low threshold, excellent stability and short wavelength spacing. The manufacturing process of this device utilizes ultraviolet lithography, eliminating the need for secondary growth steps, thereby demonstrating immense market potential and competitiveness in the realm of commercial applications.
期刊介绍:
Optics Communications invites original and timely contributions containing new results in various fields of optics and photonics. The journal considers theoretical and experimental research in areas ranging from the fundamental properties of light to technological applications. Topics covered include classical and quantum optics, optical physics and light-matter interactions, lasers, imaging, guided-wave optics and optical information processing. Manuscripts should offer clear evidence of novelty and significance. Papers concentrating on mathematical and computational issues, with limited connection to optics, are not suitable for publication in the Journal. Similarly, small technical advances, or papers concerned only with engineering applications or issues of materials science fall outside the journal scope.