Zuodong Yang , Wei Si , Fanzheng Meng , Ning Wang , Guangjing Jiang , Yuan Zong , Ling Zhao , Gance Dai
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引用次数: 0
Abstract
To obtain dense polysilicon, the deposition rate of polysilicon needs to match the surface migration rate of silicon atoms. For this purpose, a numerical model has been established to simulate the deposition rate and the surface temperature of the polysilicon rods in a 45-pair rods reduction furnace. Meanwhile, the distributions of dense and non-dense polysilicon on the rod surface have been obtained based on the production data from the same reduction furnace. Further, by combining the numerical results and production data, a ratio Φ of deposition rate to temperature has been proposed. The results reveal that Φ of 8.0 × 10-7 kg·m-2·s-1·K-1 can be considered as a threshold to ensure the generation of dense polysilicon. Moreover, using the established numerical model, the operation conditions have been optimized. On the basis of existing operation conditions, reducing the surface temperature of the rods by 10 % and the trichlorosilane (TCS) feed rate by 10 % is beneficial for the generation of dense polysilicon. The results show that the proportion of non-dense polysilicon can be decreased to 2.3 % with a 4.3 % reduction in the deposition rate under the optimized operation conditions.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.