Large-Area Electrodeposited WSe2 over Graphene Electrodes for Optoelectronics.

Abstract

Integrating graphene and transition metal dichalcogenides (TMDs) into layered material heterostructures brings together the exciting properties that each constituent 2D material offers. However, scaling the growth of graphene-TMD and related heterostructures remains a major challenge. In this work, we demonstrate the use of electrodeposition with a single source precursor (SSP), WSeCl₄, to grow few-layer WSe₂ using graphene as an electrode. Through characterization via photoluminescence, X-ray photoelectron, and Raman spectroscopy, we show that the electrodeposited WSe₂ is stoichiometric and exhibits semiconducting and light-emitting properties. TEM imaging was also performed to show the ordering of the stacked layers of WSe₂ over graphene, demonstrating the polycrystalline structure of WSe₂. This work paves the way toward utilizing electrodeposition to stack multiple TMDs, including MoS₂, WS₂, and WSe₂ over graphene for electronic and optoelectronic applications.