Pengxiang Wang, Hu Wang, Jie Fu, Hao Dong, Wenqing Zhang, Zijun Gao, Yuchuan Shao
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引用次数: 0
Abstract
The radiation detection performances of perovskites have significantly outperformed those of many traditional semiconductors. However, achieving high-quality perovskite detectors remains challenging due to bias-induced ion migration. The primary concern is the lack of recovery strategies to promptly heal migrated ions during operation, realizing high device stability and exceptional optoelectronic performance. Herein, we proposed a proactive healing strategy of migrated ions by alternating current voltage (ACV) to achieve a low current drift and high optoelectronic sensitivity. Under the ACV, bulk ion migration can be effectively controlled to maintain the long-term stability of perovskite devices. The as-grown defects would annihilate during the ACV post-treatment, decreasing defect density and improving crystal quality. Therefore, more stable and balanced hole and electron photoresponses are harvested after the ACV post-treatment. The treated MAPbBr3 detector exhibits a low dark current drift (∼10–6 nA cm–1 V–1 s–1) and excellent sensitivity [5.43 × 104 (hole) and 4.78 × 104 (electron) μC Gyair–1 cm–2]. This work not only demonstrates a deep insight into device healing but also provides an effective post-treatment and operation strategy for perovskite detectors.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.