Enhancing the Performance of Broadband Sb2Se3/Ga2O3 Self-Powered Photodetectors via Modulation of Ga2O3 Surface States and Their Application in All-Day Corona Detection

IF 8.3 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

ACS Applied Materials & Interfaces Pub Date : 2025-06-05 DOI:10.1021/acsami.5c06657

Xiangwei He, Jianping Xu, Shaobo Shi, Lina Kong, Xiaosong Zhang, Lan Li

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Abstract

The technology for photodetection and localization of corona discharge typically necessitates the integration of various photodetectors (PDs) with different photoresponse bands and relies on external power supplies. A self-powered PD was fabricated utilizing the Sb₂Se₃/Ga₂O₃ heterojunction, exhibiting a broadband photoresponse from solar-blind ultraviolet (SBUV) to visible (Vis) and near-infrared (NIR) bands. The surface states of Ga₂O₃ nanorod array (NR) films were modulated by treatment with hydrogen peroxide (H₂O₂) solution for different periods of time to suppress the interface recombination of photogenerated carriers in type-I heterojunctions. The H₂O₂ treatment resulted in increased hydroxyl groups (−OH) and decreased oxygen vacancies in Ga₂O₃ NRs. The −OH can facilitate oxygen molecule (O₂) adsorption in Ga₂O₃ NRs and form O₂^– to consume photogenerated holes to reduce the recombination of photogenerated carriers. However, the decrease of oxygen vacancies will cause a decline in the concentration of electrons in Ga₂O₃ NRs to hinder the carrier transport. Ultimately, the optimized Al/Sb₂Se₃/Ga₂O₃/FTO PD, subjected to H₂O₂ treatment for 4 min, demonstrated responsivities of 3.3, 130, and 180 mA/W under 254, 525, and 850 nm light illumination without applying a bias voltage, respectively. The utilization of oxygen adsorption and desorption processes to regulate the recombination of photogenerated carriers at the interface is an effective strategy for improving the performance of I-type heterojunction self-powered PDs. An approach was conceptually proposed for all-day real-time corona discharge monitoring in high-voltage transmission lines by utilizing the broadband photoresponse characteristic of PDs. The SBUV photoresponse was applied for the capture of SBUV light signals generated by corona discharge. The photoresponse in Vis and NIR light bands was employed to provide background information on corona discharge in both strong light conditions during daytime and weak light conditions during nighttime. The results provide a low power and miniaturized solution for the digitalization of the Power Internet of Things (IoT) and enable real-time monitoring of high-voltage transmission lines.

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通过调制Ga2O3表面态提高宽带Sb2Se3/Ga2O3自供电光电探测器的性能及其在全天电晕检测中的应用

电晕放电的光检测和定位技术通常需要将具有不同光响应带的各种光电探测器（pd）集成在一起，并依赖外部电源。利用Sb2Se3/Ga2O3异质结制备了自供电PD，具有从太阳盲紫外（SBUV）到可见光（Vis）和近红外（NIR）波段的宽带光响应。通过过氧化氢（H2O2）溶液处理不同时间，调节Ga2O3纳米棒阵列（NR）薄膜的表面状态，抑制i型异质结中光生载流子的界面重组。H2O2处理增加了Ga2O3 NRs中的羟基（−OH），减少了氧空位。−OH可以促进氧分子（O2）在Ga2O3核磁共振中的吸附，形成O2 -消耗光生空穴，减少光生载流子的重组。然而，氧空位的减少会导致Ga2O3核反应堆中电子浓度的下降，从而阻碍载流子的输运。最终，优化后的Al/Sb2Se3/Ga2O3/FTO PD在H2O2处理4 min后，在254、525和850 nm光照下的响应率分别为3.3、130和180 mA/W，且不施加偏置电压。利用氧吸附和解吸过程调节光生载流子在界面处的重组是提高i型异质结自供电pd性能的有效策略。从概念上提出了一种利用二极管宽带光响应特性进行高压输电线路全天电晕放电实时监测的方法。应用SBUV光响应技术捕获电晕放电产生的SBUV光信号。利用可见光和近红外光波段的光响应来提供白天强光条件下和夜间弱光条件下电晕放电的背景信息。研究结果为电力物联网（IoT）的数字化提供了低功耗和小型化的解决方案，并实现了高压输电线路的实时监控。

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来源期刊

ACS Applied Materials & Interfaces 工程技术-材料科学：综合

CiteScore

16.00

自引率

6.30%

发文量

4978

审稿时长

1.8 months

期刊介绍： ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.