Effect of SiC Grain Size on Curing and Dielectric Properties of SiC/EP Composites

IF 2.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ning Guo;Jiawen Wang;Chang Han;Yuanzheng Dong;Haitao Hu;Junguo Gao
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引用次数: 0

Abstract

This study investigates the preparation and properties of silicon carbide/epoxy (SiC/EP) composites, using epoxy resin as the matrix and micrometer-sized SiC particles as the inorganic filler. The influence of particle size on the curing behavior and dielectric properties of the composites is systematically analyzed. The scanning electron microscopy (SEM) confirms the absence of significant cross-sectional defects and shows that smaller particle sizes enhance the connectivity of SiC particles. Isothermal curing experiments indicate that a reduction in particle size improves the degree of cure in the composites. Conductivity measurements reveal that composites with smaller SiC particles exhibit lower conductivity and achieve a higher nonlinear coefficient, reaching a maximum of 6.31. Breakdown field tests demonstrate a nonlinear trend, with the breakdown field initially decreasing and subsequently increasing as particle size decreases. Similarly, dielectric spectrum analysis shows that the relative dielectric constant and dielectric loss first increase and then decrease with the reduction in SiC particle size.
SiC晶粒尺寸对SiC/EP复合材料固化和介电性能的影响
以环氧树脂为基体,微米级SiC颗粒为无机填料,研究了碳化硅/环氧树脂(SiC/EP)复合材料的制备及其性能。系统地分析了颗粒尺寸对复合材料固化性能和介电性能的影响。扫描电子显微镜(SEM)证实没有明显的横截面缺陷,并表明较小的颗粒尺寸增强了SiC颗粒的连通性。等温固化实验表明,颗粒尺寸的减小提高了复合材料的固化程度。电导率测试表明,SiC颗粒越小,复合材料的电导率越低,非线性系数越高,最大值为6.31。击穿场试验表明,随着粒径的减小,击穿场呈先减小后增大的非线性趋势。同样,介质谱分析表明,随着SiC粒径的减小,相对介电常数和介电损耗先增大后减小。
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来源期刊
IEEE Transactions on Dielectrics and Electrical Insulation
IEEE Transactions on Dielectrics and Electrical Insulation 工程技术-工程:电子与电气
CiteScore
6.00
自引率
22.60%
发文量
309
审稿时长
5.2 months
期刊介绍: Topics that are concerned with dielectric phenomena and measurements, with development and characterization of gaseous, vacuum, liquid and solid electrical insulating materials and systems; and with utilization of these materials in circuits and systems under condition of use.
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