A cross-voltage-domain sub-sampling phase-locked loop operating from 6.0 GHz to 8.8 GHz

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Shuai Deng , Taotao Xu , Xiang Yi , Pei Qin , Cao Wan , Chao Li , Quan Xue
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引用次数: 0

Abstract

This paper presents a cross-voltage-domain sub-sampling phase-locked loop (SSPLL) operating from 6.0 GHz to 8.8 GHz, designed for compatibility with both millimeter-wave (mmWave) and C-band transceivers. Several circuit-level optimizations are applied to enhance performance and efficiency. A dual-voltage-domain architecture is adopted: digital modules operate at a lower voltage (1.2 V) for high speed and reduced power, while analog and RF modules utilize a higher voltage domain (2.5 V) to improve drive strength and noise performance. The level shifter bridges the two voltage domains, and for the first time, a comprehensive analysis of its phase noise performance is presented, providing key insights to prevent SSPLL phase noise degradation. An input divide-by-2 enhances output frequency resolution. A class-C voltage-controlled oscillator (VCO) is adopted to reduce power consumption. The PLL is implemented in a 65 nm CMOS process, occupying a core area of 0.346 mm2. The VCO covers a frequency range of 5.98–8.83 GHz. This PLL achieves a root-mean-square (rms) jitter of 500 fs integrated from 10 kHz to 100 MHz with a typical power consumption of 43.6 mW. A reference spur of −55.42 dBc is measured with the PLL operating at 7.8 GHz.
工作频率为6.0 GHz ~ 8.8 GHz的交叉电压域子采样锁相环
本文提出了一种工作频率为6.0 GHz至8.8 GHz的交叉电压域子采样锁相环(SSPLL),设计用于兼容毫米波(mmWave)和c波段收发器。几个电路级的优化应用,以提高性能和效率。采用双电压域架构:数字模块工作在较低的电压(1.2 V)下,以实现高速和降低功耗,而模拟和RF模块使用较高的电压域(2.5 V)来提高驱动强度和噪声性能。电平移位器桥接了两个电压域,并首次对其相位噪声性能进行了全面分析,为防止SSPLL相位噪声退化提供了关键见解。输入除以2可提高输出频率分辨率。采用c类压控振荡器(VCO)来降低功耗。该锁相环采用65nm CMOS工艺,核心面积为0.346 mm2。VCO的工作频率范围为5.98 ~ 8.83 GHz。该锁相环在10 kHz至100 MHz范围内实现了500 fs的均方根抖动,典型功耗为43.6 mW。当锁相环工作在7.8 GHz时,测量到参考杂散为- 55.42 dBc。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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