Effect of gap design of a double-layer heater on melt flow behavior in a single-crystal furnace

IF 5.2 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Jiaming Kang, Mingke Tan, Zhenling Huang, Tai Li, Xiang Zhou, Guoqiang Lv, Xingwei Yang, Wenhui Ma
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Abstract

The application of double-layer heaters in single-crystal furnaces holds great promise for single-crystal silicon rod production, but the absence of sufficient supporting research literature has hindered rapid progress in practical applications. In the current work, the relationship between the design of the double-layer heater and the flow behavior in the melt was obtained by investigating the lengths of the upper and lower layers of the double-layer heater and the gap position. The FEMAG single-crystal growth simulation platform (https://www.femagsoft.com) was adopted to simulate the growth model of M10 large-sized n-type single crystals. The mechanism of influence of the double-layer heater gap design on the melt flow behavior was obtained by taking the melt heating and heater radiation characteristics as the entry point and finally adopting the oxygen content in the crystal as a quality criterion. The results indicate that movement of the gap position can alter the heat-transfer conditions, thereby changing the intensity or volume of the three main vortices in the melt, which in turn affect the oxygen transport capacity.

双层加热器间隙设计对单晶炉熔体流动行为的影响
双层加热器在单晶炉中的应用为单晶硅棒的生产带来了巨大的希望,但缺乏足够的研究文献支持,阻碍了实际应用的快速进展。本文通过研究双层加热器上下两层的长度和间隙位置,得出了双层加热器的设计与熔体流动行为的关系。采用FEMAG单晶生长模拟平台(https://www.femagsoft.com)模拟M10大尺寸n型单晶的生长模型。以熔体加热特性和加热器辐射特性为切入点,最终以晶体含氧量为质量标准,得到了双层加热器间隙设计对熔体流动行为的影响机理。结果表明,间隙位置的移动可以改变换热条件,从而改变熔体中三个主要涡的强度或体积,从而影响氧气输送能力。
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来源期刊
Journal of Applied Crystallography
Journal of Applied Crystallography CHEMISTRY, MULTIDISCIPLINARYCRYSTALLOGRAPH-CRYSTALLOGRAPHY
CiteScore
7.80
自引率
3.30%
发文量
178
期刊介绍: Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusion-controlled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published.
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