Impact of biaxial strain on electrical performance of double-gate monolayer antimonene transistors

Abstract

This paper investigates the strain-dependent electronic properties and transistor performance of monolayer antimonene using Density Functional Theory (DFT) and the ”Top-Of-the-Barrier” transport model. The study analyzes the impact of biaxial strain on the band structure, effective mass, and charge transport characteristics. The results reveal a transition from an indirect to a direct bandgap beyond at small tensile strain. The performance of n-type and p-type double gate MOSFETs with an monolayer antimonene channel is systematically evaluated. The tensile strain significantly reduces the ON-current and ON-OFF current ratio of n-type transistors, while p-type transistors exhibit greater stability under strain variations. These results provide valuable insights into the feasibility of strain-engineered monolayer antimonene for future high-performance, low-power nanoelectronic applications.