Yilin Wu, Lei Wang*, Manmen Liu, Fengxu Li, Xudong Liu, Mu Zhang, Xiaodong Li, Qi Zhu and Xudong Sun*,
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引用次数: 0
Abstract
Strontium titanate (SrTiO3) is an excellent dielectric material capable of enabling controllable structural and dielectric modifications through defect design; however, the effect of the crystallographic orientation on its structure and dielectric behavior remains underexplored. In this study, SrTiO3 single crystals were grown by using the Verneuil method, and the dielectric properties were systematically evaluated across distinct crystallographic orientations following carbon powder annealing. The carbon-embedded annealed SrTiO3 single crystals exhibited remarkable giant dielectric behavior with pronounced anisotropy across orientations. The ranking of dielectric constants in different crystal orientations from largest to smallest is [100] > [110] > [210] > [310] > [311] > [111] > [211]. Dielectric losses increase in high-frequency regions for [311], [310], [111], and [211] crystal orientations, while [110] and [210] crystal orientations exhibit losses exceeding 0.02 at 103–104 Hz. Notably, the [100] crystal orientations exhibited optimal dielectric properties demonstrating a colossal permittivity of 28,284 and a dielectric loss of 0.0113 at 1 kHz and maintains a colossal permittivity (∼1.7 × 104) with a low dielectric loss (<0.1) throughout a wide temperature (30 °C–300 °C) and frequency (10 Hz–100 kHz) range. The enhancement of the dielectric properties is closely related to the defective dipole clusters Ti3+-VO••-Ti3+ and VSr″-VO••. The [100] and [110] crystal orientations displayed higher carrier concentrations and more defective dipole clusters VSr″-VO••, where free electrons were effectively localized within these defect structures, thereby enhancing the dielectric performance. This study has elucidated the origin of the excellent dielectric properties of SrTiO3-based materials by using single crystals as the object of study and has also provided new ideas for the design of SrTiO3-based giant dielectric materials by combining defect engineering and orientation engineering.
期刊介绍:
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.