Effect of the Crystal Orientation on the Dielectric Properties of SrTiO3 Single Crystals after Annealing in Carbon Powder

IF 3.2 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Yilin Wu, Lei Wang*, Manmen Liu, Fengxu Li, Xudong Liu, Mu Zhang, Xiaodong Li, Qi Zhu and Xudong Sun*, 
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引用次数: 0

Abstract

Strontium titanate (SrTiO3) is an excellent dielectric material capable of enabling controllable structural and dielectric modifications through defect design; however, the effect of the crystallographic orientation on its structure and dielectric behavior remains underexplored. In this study, SrTiO3 single crystals were grown by using the Verneuil method, and the dielectric properties were systematically evaluated across distinct crystallographic orientations following carbon powder annealing. The carbon-embedded annealed SrTiO3 single crystals exhibited remarkable giant dielectric behavior with pronounced anisotropy across orientations. The ranking of dielectric constants in different crystal orientations from largest to smallest is [100] > [110] > [210] > [310] > [311] > [111] > [211]. Dielectric losses increase in high-frequency regions for [311], [310], [111], and [211] crystal orientations, while [110] and [210] crystal orientations exhibit losses exceeding 0.02 at 103–104 Hz. Notably, the [100] crystal orientations exhibited optimal dielectric properties demonstrating a colossal permittivity of 28,284 and a dielectric loss of 0.0113 at 1 kHz and maintains a colossal permittivity (∼1.7 × 104) with a low dielectric loss (<0.1) throughout a wide temperature (30 °C–300 °C) and frequency (10 Hz–100 kHz) range. The enhancement of the dielectric properties is closely related to the defective dipole clusters Ti3+-VO••-Ti3+ and VSr-VO••. The [100] and [110] crystal orientations displayed higher carrier concentrations and more defective dipole clusters VSr-VO••, where free electrons were effectively localized within these defect structures, thereby enhancing the dielectric performance. This study has elucidated the origin of the excellent dielectric properties of SrTiO3-based materials by using single crystals as the object of study and has also provided new ideas for the design of SrTiO3-based giant dielectric materials by combining defect engineering and orientation engineering.

晶体取向对碳粉退火后SrTiO3单晶介电性能的影响
钛酸锶(SrTiO3)是一种优异的介电材料,能够通过缺陷设计实现可控的结构和介电修饰;然而,晶体取向对其结构和介电行为的影响仍未得到充分的研究。在本研究中,采用Verneuil法生长SrTiO3单晶,并在碳粉退火后系统地评估了不同晶体取向的介电性能。碳包埋退火SrTiO3单晶表现出显著的大介电行为,且各向异性明显。不同晶体取向下介电常数由大到小的排序为[100]>;[110]比;[210]比;[310]比;[311]比;[111]比;[211]。[311]、[310]、[111]和[211]晶体取向在高频区域的介电损耗增加,而[110]和[210]晶体取向在103-104 Hz时的介电损耗超过0.02。值得注意的是,[100]晶体取向表现出最佳的介电性能,在1 kHz时显示出28,284的巨大介电常数和0.0113的介电损耗,并且在宽温度(30°C - 300°C)和频率(10 Hz-100 kHz)范围内保持巨大的介电常数(~ 1.7 × 104)和低介电损耗(<0.1)。介电性能的增强与缺陷偶极子簇Ti3+-VO••-Ti3+和VSr″-VO••密切相关。[100]和[110]晶体取向表现出更高的载流子浓度和更多的缺陷偶极子团簇VSr″-VO••,其中自由电子有效地定位在这些缺陷结构中,从而提高了介电性能。本研究以单晶为研究对象,阐明了srtio3基材料优异介电性能的来源,并结合缺陷工程和取向工程为srtio3基巨介电材料的设计提供了新的思路。
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来源期刊
Crystal Growth & Design
Crystal Growth & Design 化学-材料科学:综合
CiteScore
6.30
自引率
10.50%
发文量
650
审稿时长
1.9 months
期刊介绍: The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials. Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
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